HPU600R1K6DN mosfet equivalent, silicon n-channel power mosfet.
l Superior switching performance l Low on resistance(Rdson≤1.6 Ω) l Low gate charge (Typical Data:12.8nC) l Low reverse transfer capacitances(Typical:10.6pF) l 100% Sing.
Power switch circuit of adaptor and charger.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
ID
.
HPU600R1K6DN, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the double-shield Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power sw.
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