HFF630 - N-Channel MOSFET

HUASHAN ELECTRONIC

Datasheet Details

Part number	HFF630
Manufacturer	HUASHAN ELECTRONIC
File Size	227.20 KB
Description	N-Channel MOSFET
Datasheet	HFF630 Datasheet
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Shantou Huashan Electronic Devices Co.,Ltd. N-Channel MOSFET HFF630 APPLICATIONSL High Voltage High-Speed Switching. ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature Tj Operating Junction Temperature PD Allowable Power Dissipation Tc=25 VDSS Drain-Source Voltage VDGR Drain-Gate Voltage (RGS=1M ) VGSS Gate-Source Voltage ID *Drain Current Tc=25 * Drain current limited by maximumjunction temperature 5 5 ~1 5 0 150 38W 200V 500V ±30V 9.0A ELECTRICAL CHARACTERISTICS Ta=25 TO-220F 1 1G 2D 3S Symbol Characteristics Min Typ BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current 200 IGSS Gate –Source Leakage Current VGS(th) Gate Threshold Voltage 2.

Published: Nov 27, 2014 |