HFF630
Shantou Huashan Electronic Devices Co.,Ltd.
N-Channel MOSFET
APPLICATIONSL
High Voltage High-Speed Switching.
ABSOLUTE MAXIMUM RATINGS Ta=25
Tstg Storage Temperature
Tj Operating Junction Temperature
PD Allowable Power Dissipation Tc=25
VDSS
Drain-Source Voltage
VDGR
Drain-Gate Voltage (RGS=1M )
VGSS Gate-Source Voltage
- Drain Current Tc=25
- Drain current limited by maximumjunction temperature
5 5 ~1 5 0 150 38W 200V 500V
±30V
9.0A
ELECTRICAL CHARACTERISTICS Ta=25
TO-220F
1 1G 2D 3S
Symbol
Characteristics
Min Typ
BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current
IGSS Gate
- Source Leakage Current VGS(th) Gate Threshold Voltage
RDS(on) Static Drain-Source On-Resistance gfs Forward Transconductance
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
22 td(on) Turn
- On Delay Time
11 tr Rise Time
70 td(off) Turn
- Off Delay...
