Datasheet Details
| Part number | HFP7N60 |
|---|---|
| Manufacturer | HUASHAN ELECTRONIC |
| File Size | 648.77 KB |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Datasheet |
 HFP7N60 Datasheet
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| Part number | HFP7N60 |
|---|---|
| Manufacturer | HUASHAN ELECTRONIC |
| File Size | 648.77 KB |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Datasheet |
HFP7N60 Datasheet
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These are N-Channel enhancement mode silicon gate power field effect transistors.
They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode .
These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge.
Shantou Huashan Electronic Devices Co., Ltd.
HFP7N60 N-Channel Enhancement Mode Field Effect Transistor █.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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HFP7N60 | N-Channel MOSFET | SemiHow |
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