* 7A, 600V(See Note), RDS(on) <1.2Ω@VGS = 10 V
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability
* RoHS compliant █ Maximum Ratings.

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance,.

HFP7N80

HFP70N03V

HFP70N06

HFP730

HFP730F

HFP730S

HFP730U

HFP740

HFP75N08

HFP75N75

HFP75N80C

HFP10N60

HFP10N60S