The HGH20N120A by HUASHAN ELECTRONIC is a N-Channel Enhancement Mode Field Effect Transistor. Below is the official datasheet preview.
| Part number | HGH20N120A |
|---|---|
| Manufacturer | HUASHAN ELECTRONIC |
| File Size | 0.98 MB |
| Description | N-Channel Enhancement Mode Field Effect Transistor |
| Datasheet |
 HGH20N120A-HUASHANELECTRONIC.pdf
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Collector to Emitter Voltage Gate to Emitter Voltage Ratings 1200 ±30 Units V V Collector Current（TC = 25℃） IC Collector Current（TC = 100℃） 40 20 A A ICM (1) Pulsed Collector Current 80 A IF Diode continuous Forward current （TC = 100℃） 15 A Maximum Power Dissipation（TC = PD 25℃） Maximum Power Dissipation（TC = 100℃） 200 80 W W TJ Operating Junction Temperature -55～+150 ℃ Tstg Storage Temperature Range -55～+150 ℃ Maximum
📁 HGH20N120A Similar Datasheet
