Datasheet4U Logo Datasheet4U.com

GH10U10J - Ultra-Fast Recovery High Voltage Silicon Rectifier Diodes

Features

  • 1. High reliability design. 2. High voltage, large current. . 3. High frequency, Fast recovery. 4. Conform to RoHS and SGS. SIZE: (Unit:mm) HVGT NAME: DO-721 5. Epoxy resin molded in vacuumHave anticorrosion in the surface.

📥 Download Datasheet

Datasheet preview – GH10U10J

Datasheet Details

Part number GH10U10J
Manufacturer HVGT
File Size 468.92 KB
Description Ultra-Fast Recovery High Voltage Silicon Rectifier Diodes
Datasheet download datasheet GH10U10J Datasheet
Additional preview pages of the GH10U10J datasheet.
Other Datasheets by HVGT

Full PDF Text Transcription

Click to expand full text
GH10U10J 1.0A 10kV 50nS Ultra-Fast Recovery High Voltage Silicon Rectifier Diodes ----------------------------------------------------------------------------------------------------------------------------- ------- INTRODUCE: SHAPE DISPLAY: HVGT high voltage silicon rectifier diodes is made of high quality glass passivated chip and high reliability epoxy resin sealing structure, and through professional testing equipment inspection qualified after to customers. FEATURES: 1. High reliability design. 2. High voltage, large current.. 3. High frequency, Fast recovery. 4. Conform to RoHS and SGS. SIZE: (Unit:mm) HVGT NAME: DO-721 5. Epoxy resin molded in vacuumHave anticorrosion in the surface. APPLICATIONS: 1. High voltage multiplier circuit 2.
Published: |