HVV0912-150 - Power Transistor

General Description

The high power HVV0912-150 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the L-Band from 960MHz to 1215MHz.

Key Features

Silicon MOSFET Technology.
Operation from 24V to 50V.
High Power Gain.
Extreme Ruggedness.
Internal Input and Output Matching.
Excellent Thermal Stability.
All Gold Bonding Scheme.

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HVV0912-150 power transistor by HVVi - Datasheet Preview

Datasheet Details

Part number	HVV0912-150
Manufacturer	HVVi
File Size	761.42 KB
Description	Power Transistor
Datasheet	HVV0912-150 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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The innovative Semiconductor Company! HVV0912-150 High Voltage, High Ruggedness TM L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10μs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications Features • Silicon MOSFET Technology • Operation from 24V to 50V • High Power Gain • Extreme Ruggedness • Internal Input and Output Matching • Excellent Thermal Stability • All Gold Bonding Scheme TYPICAL PERFORMANCE High voltage vertical technology is well suited for high power pulsed applications in the L-Band including G-DME,A-DME, IFF, TCAS and Mode-S applications.