HVV0912-150 Overview
The high power HVV0912-150 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the L-Band from 960MHz to 1215MHz. The high voltage HVVFET™ technology produces over 150W of pulsed output power while offering high gain,high efficiency,and ease of matching with a 50 V supply. The vertical device structure assures high reliability and ruggedness as the device is specified to...
HVV0912-150 Key Features
- Silicon MOSFET Technology
- Operation from 24V to 50V
- High Power Gain
- Extreme Ruggedness
- Internal Input and Output Matching
- Excellent Thermal Stability
- All Gold Bonding Scheme