HVV0912-150
HVV0912-150 is Power Transistor manufactured by HVVi.
The innovative Semiconductor pany!
HVV0912-150 High Voltage, High Ruggedness
TM L-Band Avionics Pulsed Power Transistor 960-1215 MHz, 10μs Pulse, 10% Duty Cycle For Ground and Air DME, TCAS and IFF Applications
Features
- Silicon MOSFET Technology
- Operation from 24V to 50V
- High Power Gain
- Extreme Ruggedness
- Internal Input and Output Matching
- Excellent Thermal Stability
- All Gold Bonding Scheme
TYPICAL PERFORMANCE
High voltage vertical technology is well suited for high power pulsed applications in the L-Band including G-DME,A-DME, IFF, TCAS and Mode-S applications.
MODE
FREQUENCY (MHz)
VDD (V)
IDQ Power GAIN EFFICIENCY IRL
(m A)
(W)
(d B)
(%) (d B)
Class AB
50 150
43 -5
Table 1: Typical RF Performance in broadband text fixture at 25°C temperature with RF pulse conditions of pulse width = 10μs and pulse period = 100μs.
VSWR 20:1
DESCRIPTION
The high power HVV0912-150 device is an enhancement mode RF MOSFET power transistor designed for pulsed applications in the L-Band from 960MHz to 1215MHz. The high voltage HVVFET™ technology produces over 150W of pulsed output power while offering high gain,high efficiency,and ease of matching with a 50 V supply. The vertical device structure assures high reliability and ruggedness as the device is specified to withstand a 20:1 VSWR at all phase angles under full rated output power..
ORDERING INFORMATION
Device Part Number: HVV0912-150 Demo Kit Part Number: HVV0912-150-EK Available through Richardson Electronics (http://rfwireless.rell./)...
