AD100-8 Overview
AD100-8 TO52S1 Avalanche Photodiode Special characteristics: high gain at low bias voltage fast rise time 100 µm diameter active area low capacitance Parameters: (at 20 ±2°C) Active Area Dark Current 1) (M=100) Total Capacitance 1) (M=100) Breakdown Voltage UBR (at ID=2µA) Temperature Coefficient of UBR Spectral Responsivity (at 800 nm, at M=100) Cut-off Frequency (-3dB) Rise Time Optimum Gain Max.