8-bit risc-like mixed signal microcontroller
Part number: HY13P52
Manufacturer: HYCON
File Size: 721.51KB
Download: 📄 Datasheet
Description: 8-Bit RISC-like Mixed Signal Microcontroller
Image gallery
TAGS
📁 Related Datasheet
HY13P53 - 8-Bit RISC-like Mixed Signal Microcontroller
(HYCON)
HY13P53 Datasheet
8-Bit RISC-like. Mixed Signal Microcontroller Embedded 24-Bit ΣΔADC
© 2013-2015 HYCON Technology Corp. www.hycontek.com
Preliminar.
HY13P53B - 8-Bit RISC-like Mixed Signal Microcontroller
(HYCON)
HY13P53B Datasheet
8-Bit RISC-like. Mixed Signal Microcontroller Embedded 24-Bit ΣΔADC
© 2014-2015 HYCON Technology Corp. www.hycontek.com
Prelimina.
HY13P56B - 8-Bit RISC-like Mixed Signal Microcontroller
(HYCON)
HY13P56B Datasheet
8-Bit RISC-like. Mixed Signal Microcontroller Embedded 24-Bit ΣΔADC
© 2014-2015 HYCON Technology Corp. www.hycontek.com
Prelimina.
HY1303C - N-Channel MOSFET
(HUAYI)
HY1303C
Single N-Channel Enhancement Mode MOSFET
Features
• 30V/ 30A
RDS(ON)= 4.2 m(typ.) @ VGS=10 V RDS(ON)= 5.5 m(typ.) @ VGS 4.5 V
• High Cel.
HY1320 - N-Channel Enhancement Mode MOSFET
(HOOYI)
HY1320P/B
N-Channel Enhancement Mode MOSFET
Features
• 200V/30 A
RDS(ON) = 63 mΩ (typ.) @ VGS=10V
• 100% avalanche tested • Reliable and Rugged • Le.
HY1320B - N-Channel Enhancement Mode MOSFET
(HOOYI)
HY1320P/B
N-Channel Enhancement Mode MOSFET
Features
• 200V/30 A
RDS(ON) = 63 mΩ (typ.) @ VGS=10V
• 100% avalanche tested • Reliable and Rugged • Le.
HY1320P - N-Channel Enhancement Mode MOSFET
(HOOYI)
HY1320P/B
N-Channel Enhancement Mode MOSFET
Features
• 200V/30 A
RDS(ON) = 63 mΩ (typ.) @ VGS=10V
• 100% avalanche tested • Reliable and Rugged • Le.
HY1-xxV - (HY Relays) Non-polarized 1 form C relay
(NAIS)
( DataSheet : www..com )
Non-polarized 1 Form C Relay
HY-RELAYS
12 .472
7.4 .291
FEATURES
• High sensitivity: 150 mW/200 mW • A wide r.
HY10-P - Current Transducers HY 5 to 25-P
(LEM)
Current Transducers HY 5 to 25-P
For the electronic measurement of currents : DC, AC, pulsed, mixed, with a galvanic isolation between the primary cir.
HY1001M - N-Channel Enhancement Mode MOSFET
(HOOYI)
HY1001M/P
N-Channel Enhancement Mode MOSFET
Features
• 70V/75A,
RDS(ON)=7.8mΩ (typ.) @ VGS=10V
• Avalanche Rated • Reliable and Rugged • Lead Free a.