www.hygroup.com.tw
GBJ8005 THRU GBJ810
Glass Passivated Bridge Rectifiers
玻璃钝化整流桥
Features 特征
● Glass passivated chip 玻璃钝化芯片
● Low forward voltage drop 正向压降低
● Ideal for printed circuit board 适用于印刷电路板中
● High surge current capability 高的浪涌能力
Reverse Voltage - 50 to 1000 Volts
反向电压 50-1000V
Forward Current - 8.0 Amperes
正向电流 8.0A
GBJ Pb
RoHS
COMPLIANT
Mechanical Data 外观信息
● Polarity: Symbol marked on body 极性：标志在产品的本体上
● Mounting position: Any 安装位置：任何位置
Applications 应用
● General purpose use in AC/DC bridge full wave rectification,
for SMPS, lighting ballaster, adapter, etc.
一般应用于交流/直流桥式全波整流，如：开关电源，
照明镇流器、适配器等。
Package Outline Dimensions in Inches (Millimeters)
封装外观尺寸单位英寸（毫米）
Maximum Ratings and Electrical Characteristics 最大额定值及电气特性
Rating at 25℃ ambient temperature unless otherwise specified. 环境温度25℃，除非特别说明。
Single phase, half wave, 60Hz, resistive or inductive load. 单相半波， 60Hz， 阻性或感性负载。
For capacitive load, derate current by 20%. 对于电容性负载，降低20%的额定电流。
Characteristics
特性
Symbol GBJ80 GBJ80 GBJ80 GBJ80 GBJ80 GBJ80 GBJ81 Unit
符号 05
1
2
4
6
8
0 单位
Maximum Repetitive Peak Reverse Voltage
最大重复峰值反向电压
VRRM
50
100 200 400 600 800 1000
V
Maximum RMS Voltage 最大有效反向电压
Maximum DC Blocking Voltage 最大直流阻断电压
Maximum Average Forward Rectified Current (with heatsink Note 2)
最大正向平均整流电流 @ TC=100℃ (without heatsink)
Peak Forward Surge Current, 8.3mS Single Half Sine-Wave,
VRMS
VDC
I(AV)
35
50
70 140 280 420 560 700
100 200 400 600 800 1000
8.0
3.4
V
V
A
Superimposed on Rated Load (JEDEC Method)
IFSM
200
A
8.3mS单一正弦半波叠加在额定负载上的浪涌能力（JEDEC方法）
I2t Rating for Fusing (t<8.3mS) 熔断额定值 （t＜8.3mS)
I2t
166 A2s
Peak Forward Voltage per Diode at 4A DC
单个二极管在4A电流下的正向峰值电压
VF 1.0
V
Maximum DC Reverse Current at Rated @TJ=25℃
DC Blocking Voltage per Diode @TJ=125℃
单个二极管在额定直流电压下的最大反向直流电流
5.0
IR μA
500
Typical Junction Capacitance per Diode (Note1)
典型结电容（备注1）
CJ
Typical Thermal Resistance to Ambient (Note2) 结到环境的典型热阻值（备注2） RθJA
Typical Thermal Resistance to case (Note2) 结到壳的典型热阻值（备注2）
RθJC
Typical Thermal Resistance to lead (Note2) 结到引线的典型热阻值（备注2） RθJL
Operating Junction Temperature Range 结温工作范围
TJ
Storage Temperature Range 储存温度范围
TSTG
55
9
1.8
1.5
-55 to +150
-55 to +150
pF
℃/W
℃
℃
Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC. 在 1.0MHz 下和反向电压为 4.0V DC下测试。
2.Device mounted on 75mm*75mm*1.6mm Cu plate heatsink. 安装在 75mm*75mm*1.6mm Cu 的散热片上。
3.The typical data above is for reference only(典型值仅供参考).
GBJ8*-U-00-00
Rev. 8, 19-Jul-2017
