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HY ELECTRONIC
HY ELECTRONIC

HY5N50FT Datasheet Preview

HY5N50FT Datasheet

500V / 5A N-Channel Enhancement Mode MOSFET

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HY5N50FT pdf
HY5N50T / HY5N50FT
500V / 5A
N-Channel Enhancement Mode MOSFET
500V, RDS(ON)=1.5W@VGS=10V, ID=2.5A
Features
• Low On-State Resistance
• Fast Switching
• Low Gate Charge & Low CRSS
• Fully Characterized Avalanche Voltage and Current
• Specially Desigened for AC Adapter, Battery Charger and SMPS
• In compliance with EU RoHs 2002/95/EC Directives
Mechanical Information
• Case: TO-220AB / ITO-220AB Molded Plastic
• Terminals : Solderable per MIL-STD-750,Method 2026
TO-220AB
1
2
3
ITO-220AB
12
3
2 Drain
Marking & Ordering Information
TYPE
MARKING PACKAGE PACKING
HY5N50T
5N50T
TO-220AB 50PCS/TUBE
HY5N50FT
5N50FT
ITO-220AB 50PCS/TUBE
1
Gate
3 Source
Absolute Maximum Ratings (TC=25°C unless otherwise specified )
Parameter
Symbol HY5N50T
HY5N50FT
Drain-Source Voltage
VDS 500
Gate-Source Voltage
VGS +30
Continuous Drain Current
TC=25
ID
5
5
Pulsed Drain Current 1)
Maximum Power Dissipation
Derating Factor
TC=25
Avalanche Energy with Single Pulse
IAS=5A, VDD=95V, L=11mH
Operating Junction and Storage Temperature Range
IDM
PD
EAS
TJ, TSTG
20
71
0.57
20
27
0.22
135
-55 to +150
Units
V
V
A
A
W
mJ
Note : 1. Maximum DC current limited by the package
Thermal Characteristics
Parameter
Junction-to-Case Thermal Resistance
Junction-to-Case Thermal Resistance
Symbol
RqJC
RqJA
HY5N50T
1.76
50
HY5N50FT
4.6
110
Units
/W
/W
COMPANY RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGNFUNCTIONS AND RELIABILITY WITHOUT NOTICE
REV 1.0, 24-Sept-2012
PAGE.1



HY ELECTRONIC
HY ELECTRONIC

HY5N50FT Datasheet Preview

HY5N50FT Datasheet

500V / 5A N-Channel Enhancement Mode MOSFET

No Preview Available !

HY5N50FT pdf
HY5N50T / HY5N50FT
Electrical Characteristics ( TC=25, Unless otherwise noted )
Paramter
Symbol Test Condition
Min. Typ.
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current
Gate Body Leakage Current
BVDSS
VGS(th)
RDS(ON)
IDSS
IGSS
VGS=0VID=250uA
VDS=VGSID=250uA
VGS=10VID=2.5A
VDS=500VVGS=0V
VGS=+30VVDS=0V
500
2.0
-
-
-
-
-
1.2
-
-
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg - 9.6
Qgs
VDS=400VID=5A
VGS=10V
-
2.1
Qgd - 2.7
Turn-On Delay Time
td(on)
- 15.8
Turn-On Rise Time
Turn-Off Delay Time
tr VDD=250VID=5A - 36.2
td(off)
VGS=10VRG=25W
-
22.6
Turn-Off Fall Time
tf
- 18.8
Input Capacitance
Ciss
- 465
Output Capacitance
Coss
VDS=25VVGS=0V
f=1.0MHZ
-
76
Reverse Transfer Capacitance
Crss
- 2.1
Source-Drain Diode
Max. Diode Forwad Voltage
IS
-
--
Max. Pulsed Source Current
Diode Forward Voltage
ISM -
VSD IS=5AVGS=0V
--
--
Reverse Recovery Time
Reverse Recovery Charge
trr VGS=0VIS=5A
Qrr di/dt=100A/us
- 245
- 2.2
Max.
-
4.0
1.5
10
+100
16
-
-
21
48
28
26
-
-
-
5.0
20
1.4
-
-
Units
V
V
W
uA
nA
nC
ns
pF
A
A
V
ns
uC
NOTE : Pulse Test : Pulse Width 300us, duty cycle 2%
REV 1.0, 24-Sept-2012
PAGE.2


Part Number HY5N50FT
Description 500V / 5A N-Channel Enhancement Mode MOSFET
Maker HY ELECTRONIC
Total Page 4 Pages
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