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HY5N50T - 500V / 5A N-Channel Enhancement Mode MOSFET

Key Features

  • Low On-State Resistance.
  • Fast Switching.
  • Low Gate Charge & Low CRSS.
  • Fully Characterized Avalanche Voltage and Current.
  • Specially Desigened for AC Adapter, Battery Charger and SMPS.
  • In compliance with EU RoHs 2002/95/EC Directives Mechanical Information.
  • Case: TO-220AB / ITO-220AB Molded Plastic.
  • Terminals : Solderable per MIL-STD-750,Method 2026 TO-220AB 1 2 3 ITO-220AB 12 3 2 Drain Marking & Ordering Information TYPE.

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Datasheet Details

Part number HY5N50T
Manufacturer HY ELECTRONIC
File Size 133.44 KB
Description 500V / 5A N-Channel Enhancement Mode MOSFET
Datasheet download datasheet HY5N50T Datasheet

More Datasheets from HY ELECTRONIC

Part Number Description
HY5N50FT 500V / 5A N-Channel Enhancement Mode MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HY5N50T / HY5N50FT 500V / 5A N-Channel Enhancement Mode MOSFET 500V, RDS(ON)=1.5W@VGS=10V, ID=2.