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KBU8005 Datasheet Preview

KBU8005 Datasheet

Silicon Bridge Rectifiers

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www.hygroup.com.tw
Silicon Bridge Rectifiers
硅桥式整流桥
Features 特征
Low forward voltage drop 正向压降低
Ideal for printed circuit board 适用于印刷电路板中
High surge forward current capability 耐正向浪涌电流能力高
Materials used carries U/L recognition 材料符合UL认证
Mechanical Data 外观信息
Polarity: Symbol Marked on body 极性:标志在产品的本体上
Mounting position: Any 安装位置:任何位置
Mounting torgue: 5 In.Ib.Max 安装扭矩:最大5 In.Ib.
Applications 应用
General purpose use in AC/DC bridge full wave rectification,
for SMPS, lighting ballaster, adapter, etc.
一般应用于交流/直流桥式全波整流,如:开关电源,
照明镇流器、适配器等。
KBU8005 THRU KBU810
Reverse Voltage - 50 to 1000 Volts
反向电压 50-1000V
Forward Current - 8 Amperes
正向电流 8A
KBU Pb
RoHS
COMPLIANT
Package Outline Dimensions in Inches (Millimeters)
封装外观尺寸单位英寸(毫米)
Maximum Ratings and Electrical Characteristics 最大额定值及电气特性
Rating at 25ambient temperature unless otherwise specified. 环境温度25℃,除非特别说明。
Single phase, half wave, 60Hz, resistive or inductive load. 单相半波, 60Hz, 阻性或感性负载。
For capacitive load, derate current by 20%. 对于电容性负载,降低20%的额定电流。
Characteristics
特性
Symbol
符号
KBU8005 KBU801
KBU802
KBU804
KBU806
KBU808
KBU810
UNIT
Maximum Repetitive Peak Reverse Voltage
最大重复峰值反向电压
VRRM
50
100 200 400 600 800 1000 V
Maximum RMS Voltage 最大有效反向电压
Maximum DC Blocking Voltage 最大直流阻断电压
Maximum Average Forward Rectified Current @ TC=100
最大正向平均整流电流
VRMS
VDC
I(AV)
35
50
70 140 280 420 560 700 V
100 200 400 600 800 1000 V
8.0 A
Peak Forward Surge Current, 8.3mS Single Half Sine-Wave,
Superimposed on Rated Load (JEDEC Method)
IFSM
200
A
8.3mS单一正弦半波叠加在额定负载上的浪涌能力(JEDEC方法)
I2t Rating for Fusing (t<8.3mS) 熔断额定值 (t8.3mS)
I2t
166 A2s
Peak Forward Voltage per Diode at 4A DC
VF 1.0 V
单个二极管在4A电流下的正向峰值电压
Maximum DC Reverse Current at Rated @TJ=25
DC Blocking Voltage per Diode @TJ=125
单个二极管在额定直流电压下的最大反向直流电流
IR
10
μA
300
Typical Junction Capacitance (Note2) 典型结电容(备注1
CJ
250
Operating Junction Temperature Range 结温工作范围
TJ
-55 to +150
Storage Temperature Range 储存温度范围
TSTG
-55 to +150
Notes: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V DC. 1.0MHz 下和反向电压为 4.0V DC下测试。
2.The typical data above is for reference only . 典型值仅供参考。
pF
KBU8*-B-00-00
Rev. 8, 19-Jul-2017




HY ELECTRONIC

KBU8005 Datasheet Preview

KBU8005 Datasheet

Silicon Bridge Rectifiers

No Preview Available !

Rating and Characteristic Curves 特性曲线
KBU8005 THRU KBU810
10
8
6
4
2
0
0
1000
100
10
1
Fig. 1 - Forward Current Derating Curve
1 正向电流降额曲线
50 100
Case Temperature ()
壳温(℃)
Fig. 3 - Typical Reverse Characteristics
3 典型的反向特性
150
TJ=125°C
TJ=100°C
TJ=75°C
TJ=25°C
Fig. 2 - Maximum Non-Repetitive Surge Current
2 最大不重复正向浪涌曲线
250
8.3mS Single Half-Sine-Wave
200 (JEDEC METOD) 8.3毫秒正弦半波
150
100
50
0
1 10 100
Number of Cycles at 60Hz
60Hz的循环次数
Fig. 4 - Typical Forward Characteristics
4 典型的正向特性
10
Pulse Width 300uS
2%Duty Cycle
300uS脉宽、2%工作周期
TJ=100°C
1
TJ=125°C
TJ=25°C
TJ=75°C
0.1
20
40 60 80 100
Percent of Rated Peak Reverse Voltage (%)
额定峰值反向电压的百分比(%
0.1
0
0.2 0.4 0.6 0.8 1 1.2 1.4
Instantaneous Forward Voltage (V)
瞬时正向电压(V
Fig. 5 - Typical Junction Capacitance
图5 典型的结电容
1000
1.6
100
10
TJ=25°C,f=1MHz
1
1 10
Reverse Voltage (V)
反向电压(V
The curve above is for reference only. 曲线图仅供参考。
100
KBU8*-B-00-00
Rev. 8, 19-Jul-2017


Part Number KBU8005
Description Silicon Bridge Rectifiers
Maker HY ELECTRONIC
Total Page 3 Pages
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