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Harris

IRF220 Datasheet Preview

IRF220 Datasheet

N-Channel Power MOSFETs

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Semiconductor
October 1997
IRF220, IRF221,
IRF222, IRF223
4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm,
N-Channel Power MOSFETs
Features
• 4.0A and 5.0A, 150V and 200V
• rDS(ON) = 0.8and 1.2
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRF220
TO-204AA
IRF220
IRF221
TO-204AA
IRF221
IRF222
TO-204AA
IRF222
IRF223
TO-204AA
IRF223
NOTE: When ordering, use the entire part number.
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver-
tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
Formerly developmental type TA09600.
Symbol
D
G
S
Packaging
DRAIN
(FLANGE)
JEDEC TO-204AA
GATE (PIN 1)
SOURCE (PIN 2)
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 199&
1
File Number 1567.2




Harris

IRF220 Datasheet Preview

IRF220 Datasheet

N-Channel Power MOSFETs

No Preview Available !

IRF220, IRF221, IRF222, IRF223
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
IRF220
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . .VDS
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . VDGR
Continuous Drain Current. . .
TC = 100oC . . . . . . . . . . . .
........
........
...
...
...
...
.........
.........
ID
ID
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . IDM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .VGS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . PD
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
200
200
5.0
3.0
20
±20
40
0.32
Single Pulse Avalanche Rating. . . . . . . . . . . . . . . . . . . . . EAS
Operating and Storage Temperature . . . . . . . . . . . . TJ, TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . TL
Package Body for 10s, See Techbrief 334 . . . . . . . . . Tpkg
85
-55 to 150
300
260
IRF221
150
150
5.0
3.0
20
±20
40
0.32
85
-55 to 150
300
260
IRF222
200
200
4.0
2.5
16
±20
40
0.32
85
-55 to 150
300
260
IRF223
150
150
4.0
2.5
16
±20
40
0.32
85
-55 to 150
300
260
UNITS
V
V
A
A
A
V
W
W/oC
mJ
oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
MIN TYP MAX UNITS
Drain to Source Breakdown Voltage
IRF220, IRF222
BVDSS ID = 250µA, VGS = 0V, (Figure 10)
200 - - V
IRF221, IRF223
150 - - V
Gate Threshold Voltage
Zero Gate Voltage Drain Current
On-State Drain Current (Note 2)
IRF220, IRF221
VGS(TH) VDS = VGS, ID = 250µA
2.0 - 4.0 V
IDSS
VDS = Rated BVDSS, VGS = 0V
VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC
-
-
- 25 µA
- 250 µA
ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V
5.0 - - A
IRF222, IRF223
4.0 - - A
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
IRF220, IRF221
IGSS VGS = ±20V
rDS(ON) ID = 2.5A, VGS = 10V, (Figure 8)
- - ±100 nA
- 0.5 0.8
IRF222, IRF223
- 0.8 1.2
Forward Transconductance (Note 2)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
(Gate to Source + Gate to Drain)
Gate to Source Charge
Gate to Drain “Miller” Charge
gfs VDS > ID(ON) x rDS(ON)MAX, ID = 2.5A
td(ON)
tr
td(OFF)
tf
VDD = 0.5 x Rated BVDSS, ID 2.5A, RG = 50
For IRF220, 222 RL = 80
For IRF221, 223 RL = 60
(Figures 17, 18) MOSFET Switching Times are
Essentially Independent of Operating
Temperature
Qg(TOT)
Qgs
VGS = 10V, ID = 6.0A, VDS = 0.8 x Rated BVDSS
Ig(REF) = 1.5mA, (Figures 14, 19, 20) Gate
Charge is Essentially Independent of Operating
Temperature
Qgd
1.3
-
-
-
-
-
-
-
2.5 -
20 40
30 60
50 100
30 60
11 15
5.0 -
6.0 -
S
ns
ns
ns
ns
nC
nC
nC
2


Part Number IRF220
Description N-Channel Power MOSFETs
Maker Harris
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IRF220 Datasheet PDF






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