* 4.0A and 5.0A, 150V and 200V
* rDS(ON) = 0.8Ω and 1.2Ω
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteri.

such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar swi.

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power.

IRF220

IRF2204

IRF2204L

IRF2204PBF

IRF2204S

IRF222

IRF223

IRF224

IRF225

IRF200

IRF200B211

IRF200P222

IRF200P223