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IRF222 Datasheet N-Channel Power MOSFETs

Manufacturer: Harris

Download the IRF222 datasheet PDF. This datasheet also includes the IRF220 variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IRF220-Harris.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number IRF222
Manufacturer Harris
File Size 68.17 KB
Description N-Channel Power MOSFETs
Download IRF222 Download (PDF)

General Description

These are N-Channel enhancement mode silicon gate power field effect transistors.

They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.

All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.

Overview

Semiconductor October 1997 IRF220, IRF221, IRF222, IRF223 4.0A and 5.0A, 150V and 200V, 0.8 and 1.

Key Features

  • 4.0A and 5.0A, 150V and 200V.
  • rDS(ON) = 0.8Ω and 1.2Ω.
  • SOA is Power Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • Majority Carrier Device.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Information PART NUMBER.

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