IRF322 datasheet, mosfets equivalent, Harris

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IRF322 Features and benefits

* 2.8A and 3.3A, 350V and 400V
* rDS(ON) = 1.8Ω and 2.5Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switchi.

IRF322 Application

such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar swi.

IRF322 Description

These are N-Channel enhancement mode silicon gate power ﬁeld effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. All of these power.

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