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IRF823 - N-Channel Power MOSFETs

Download the IRF823 datasheet PDF. This datasheet also covers the IRF820 variant, as both devices belong to the same n-channel power mosfets family and are provided as variant models within a single manufacturer datasheet.

General Description

These are N-Channel enhancement mode silicon gate power field effect transistors.

They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.

Key Features

  • 2.2A and 2.5A, 450V and 500V.
  • rDS(ON) = 3.0Ω and 4.0Ω.
  • Single Pulse Avalanche Energy Rated.
  • SOA is Power Dissipation Limited.
  • Nanosecond Switching Speeds.
  • Linear Transfer Characteristics.
  • High Input Impedance.
  • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol Ordering Information D PART NUMBER IRF820 IRF821 IRF822 IRF823.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF820-Harris.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number IRF823
Manufacturer Harris
File Size 44.37 KB
Description N-Channel Power MOSFETs
Datasheet download datasheet IRF823 Datasheet

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Other Datasheets by Harris

Part Number Description
IRF820 N-Channel Power MOSFETs
IRF821 N-Channel Power MOSFETs
IRF822 N-Channel Power MOSFETs
IRF140 N-Channel Power MOSFETs
IRF141 N-Channel Power MOSFETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
S E M I C O N D U C T O R IRF820, IRF821, IRF822, IRF823 2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm, N-Channel Power MOSFETs Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA17405. November 1997 Features • 2.2A and 2.5A, 450V and 500V • rDS(ON) = 3.0Ω and 4.