* 2.2A and 2.5A, 450V and 500V
* rDS(ON) = 3.0Ω and 4.0Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switchi.

such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar swi.

These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power.

IRF820

IRF820A

IRF820AL

IRF820ALPBF

IRF820APBF

IRF820AS

IRF820ASPBF

IRF820B

IRF820FI

IRF820L

IRF820S

IRF821

IRF822