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MUR8100E - 700V - 1000V Ultrafast Diodes

Download the MUR8100E datasheet PDF. This datasheet also covers the MUR870E variant, as both devices belong to the same 700v - 1000v ultrafast diodes family and are provided as variant models within a single manufacturer datasheet.

General Description

MUR870E, MUR880E, MUR890E, MUR8100E and RUR870, RUR880, RUR890, RUR8100 are ultrafast dual diodes (tRR < 75ns) with soft recovery characteristics.

They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction.

Key Features

  • Ultrafast with Soft Recovery Characteristic (tRR < 75ns).
  • +175 C Rated Junction Temperature.
  • Reverse Voltage Up to 1000V.
  • Avalanche Energy Rated o.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MUR870E-Harris.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MUR8100E
Manufacturer Harris
File Size 38.64 KB
Description 700V - 1000V Ultrafast Diodes
Datasheet download datasheet MUR8100E Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
S E M I C O N D U C T O R MUR870E, MUR880E, MUR890E, MUR8100E, RURP870, RURP880, RURP890, RURP8100 8A, 700V - 1000V Ultrafast Diodes Package JEDEC TO-220AC ANODE CATHODE CATHODE (FLANGE) April 1995 Features • Ultrafast with Soft Recovery Characteristic (tRR < 75ns) • +175 C Rated Junction Temperature • Reverse Voltage Up to 1000V • Avalanche Energy Rated o Applications • Switching Power Supply • Power Switching Circuits • General Purpose Symbol K Description MUR870E, MUR880E, MUR890E, MUR8100E and RUR870, RUR880, RUR890, RUR8100 are ultrafast dual diodes (tRR < 75ns) with soft recovery characteristics. They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction.