MUR870E diodes equivalent, 700v - 1000v ultrafast diodes.
* Ultrafast with Soft Recovery Characteristic (tRR < 75ns)
* +175 C Rated Junction Temperature
* Reverse Voltage Up to 1000V
* Avalanche Energy Rated
o
A.
* Switching Power Supply
* Power Switching Circuits
* General Purpose
Symbol
K
Description
MUR870E, MUR880.
MUR870E, MUR880E, MUR890E, MUR8100E and RUR870, RUR880, RUR890, RUR8100 are ultrafast dual diodes (tRR < 75ns) with soft recovery characteristics. They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epit.
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