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RURH1520CC - (RURH1510CC - RURH1520CC) Ultrafast Dual Diodes

Download the RURH1520CC datasheet PDF. This datasheet also covers the RURH1510CC variant, as both devices belong to the same (rurh1510cc - rurh1520cc) ultrafast dual diodes family and are provided as variant models within a single manufacturer datasheet.

Description

MUR3010PT, MUR3015PT, MUR3020PT and RURH1510CC, RURH1515CC, RURH1520CC are ultrafast dual diodes (tRR < 30ns) with soft recovery characteristics.

They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction.

Features

  • Ultrafast with Soft Recovery Characteristic (tRR < 30ns).
  • +175oC Rated Junction Temperature.
  • Reverse Voltage Up to 200V.
  • Avalanche Energy Rated.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (RURH1510CC_HarrisCorporation.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number RURH1520CC
Manufacturer Harris Corporation
File Size 57.77 KB
Description (RURH1510CC - RURH1520CC) Ultrafast Dual Diodes
Datasheet download datasheet RURH1520CC Datasheet

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Other Datasheets by Harris Corporation

Part Number Description
RURH1510CC (RURH1510CC - RURH1520CC) Ultrafast Dual Diodes
RURH1515CC (RURH1510CC - RURH1520CC) Ultrafast Dual Diodes
RURD410 (RURD410 - RURD420S) Ultrafast Diodes
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Full PDF Text Transcription

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www.DataSheet4U.com S E M I C O N D U C T O R MUR3010PT, RURH1510CC, MUR3015PT, RURH1515CC, MUR3020PT, RURH1520CC 15A, 100V - 200V Ultrafast Dual Diodes Package JEDEC TO-218AC April 1995 Features • Ultrafast with Soft Recovery Characteristic (tRR < 30ns) • +175oC Rated Junction Temperature • Reverse Voltage Up to 200V • Avalanche Energy Rated Applications • Switching Power Supply • Power Switching Circuits • General Purpose CATHODE (FLANGE) ANODE1 CATHODE ANODE2 Description MUR3010PT, MUR3015PT, MUR3020PT and RURH1510CC, RURH1515CC, RURH1520CC are ultrafast dual diodes (tRR < 30ns) with soft recovery characteristics. They have a low forward voltage drop and are of planar, silicon nitride passivated, ion-implanted, epitaxial construction.
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