Datasheet Summary
Production specification
Power Transistor
Features z Low VCE(sat). VCE(sat)=-0.5V(Typ)(IC/IB=-2A/-0.2A) z plements the 2SD1760.
2SB1184
Pb
Lead-free
APPLICATIONS z z Epitaxial planar type. PNP silicon transistor.
TO-252
MAXIMUM RATING operating temperature range applies unless otherwise specified
Symbol Parameter Collector-Base Volage Value Units
VCBO
-60
VCEO
Collector-Emitter Voltage
-50
VEBO
Emitter-Base Voltage
-5
Collector Current
-3
Collector Power Dissipation
-4.5
Collector Power Dissipation
Tj ,Tstg
Junction and Storage temperature range
-55 to +150
℃
W007 Rev.A
.gmicroelec. 1
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