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Hewlett-Packard
Hewlett-Packard

MSA-0200 Datasheet Preview

MSA-0200 Datasheet

Cascadable Silicon Bipolar MMIC Amplifier

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MSA-0200 pdf
Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-0200
Features
• Cascadable 50 Gain Block
• 3 dB Bandwidth:
DC to 2.8 GHz
• 12.0 dB Typical Gain at
1.0␣ GHz
• Unconditionally Stable
(k>1)
Description
The MSA-0200 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) chip. This MMIC is
designed for use as a general
purpose 50 gain block. Typical
applications include narrow and
broad band IF and RF amplifiers
in commercial, industrial and
military applications.
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f MAX,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Chip Outline[1]
The recommended assembly
procedure is gold-eutectic die
attach at 400°C and either wedge
or ball bonding using 0.7 mil gold
wire.[1] See APPLICATIONS
section, “Chip Use”.
Note:
1. This chip contains additional biasing
options. The performance specified
applies only to the bias option whose
bond pads are indicated on the chip
outline. Refer to the APPLICATIONS
section “Silicon MMIC Chip Use” for
additional information.
Typical Biasing Configuration
R bias
VCC > 7 V
C block
IN
MSA
RFC (Optional)
C block
Vd = 5 V
OUT
5965-9695E
6-266



Hewlett-Packard
Hewlett-Packard

MSA-0200 Datasheet Preview

MSA-0200 Datasheet

Cascadable Silicon Bipolar MMIC Amplifier

No Preview Available !

MSA-0200 pdf
Absolute Maximum Ratings
Parameter
Absolute Maximum[1]
Device Current
60 mA
Power Dissipation[2,3]
325 mW
RF Input Power
+13 dBm
Junction Temperature
Storage Temperature
200°C
–65 to 200°C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TMounting Surface (TMS) = 25°C.
3. Derate at 28.6 mW/°C for TMS > 189°C.
4. The small spot size of this technique results in a higher, though more
accurate determination of θjc than do alternate methods. See MEASURE-
MENTS section “Thermal Resistance” for more information.
Thermal Resistance[2,4]:
θjc = 35°C/W
MSA-0200 Electrical Specifications[1], TA = 25°C
Symbol
Parameters and Test Conditions[2]: Id = 25 mA, ZO = 50
GP Power Gain (|S21| 2)
f = 0.1 GHz
GP Gain Flatness
f = 0.1 to 1.8 GHz
f3 dB
3 dB Bandwidth
VSWR
Input VSWR
Output VSWR
f = 0.1 to 3.0 GHz
f = 0.1 to 3.0 GHz
NF 50 Noise Figure
f = 1.0 GHz
P1 dB Output Power at 1 dB Gain Compression
f = 1.0 GHz
IP3 Third Order Intercept Point
f = 1.0 GHz
tD Group Delay
f = 1.0 GHz
Vd Device Voltage
dV/dT Device Voltage Temperature Coefficient
Units Min.
dB
dB
GHz
dB
dBm
dBm
psec
V
mV/°C
4.5
Typ. Max.
12.5
± 0.6
2.8
1.4:1
1.4:1
6.5
4.5
17.0
125
5.0
–8.0
5.5
Notes:
1. The recommended operating current range for this device is 18 to 40 mA. Typical performance as a function of current
is on the following page.
2. RF performance of the chip is determined by packaging and testing 10 devices per wafer in a dual ground configuration.
Part Number Ordering Information
Part Number
Devices Per Tray
MSA-0200-GP4
100
6-267


Part Number MSA-0200
Description Cascadable Silicon Bipolar MMIC Amplifier
Maker Hewlett-Packard
Total Page 4 Pages
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