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Hewlett-Packard
Hewlett-Packard

MSA-0335 Datasheet Preview

MSA-0335 Datasheet

(MSA-0335 / MSA-0336) Cascadable Silicon Bipolar MMIC Amplifier

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MSA-0335 pdf
Cascadable Silicon Bipolar
MMIC␣ Amplifiers
Technical Data
MSA-0335, -0336
Features
• Cascadable 50 Gain Block
• 3 dB Bandwidth:
DC to 2.7 GHz
• 12.0 dB Typical Gain at
1.0␣ GHz
• 10.0 dBm Typical P1dB at
1.0␣ GHz
• Unconditionally Stable
(k>1)
• Cost Effective Ceramic
Microstrip Package
Description
The MSA-0335 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a cost effective,
microstrip package. This MMIC is
designed for use as a general
purpose 50 gain block. Typical
applications include narrow and
broad band IF and RF amplifiers
in industrial and military applica-
tions.
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f MAX,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Available in cut lead version
(package 36) as MSA-0336.
35 micro-X Package[1]
Note:
1. Short leaded 36 package available
upon request.
Typical Biasing Configuration
R bias
VCC > 7 V
C block
IN
4
3
1 MSA
2
RFC (Optional)
C block
Vd = 5 V
OUT
5965-9568E
6-302



Hewlett-Packard
Hewlett-Packard

MSA-0335 Datasheet Preview

MSA-0335 Datasheet

(MSA-0335 / MSA-0336) Cascadable Silicon Bipolar MMIC Amplifier

No Preview Available !

MSA-0335 pdf
MSA-0335, -0336 Absolute Maximum Ratings
Parameter
Absolute Maximum[1]
Device Current
Power Dissipation[2,3]
RF Input Power
Junction Temperature
Storage Temperature[4]
80 mA
425 mW
+13 dBm
200°C
–65 to 200°C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 6.7 mW/°C for TC > 136°C.
4. Storage above +150°C may tarnish the leads of this package making it
difficult to solder into a circuit.
5. The small spot size of this technique results in a higher, though more
accurate determination of θjc than do alternate methods. See MEASURE-
MENTS section “Thermal Resistance” for more information.
Thermal Resistance[2,5]:
θjc = 150°C/W
Electrical Specifications[1], TA = 25°C
Symbol
Parameters and Test Conditions: Id = 35 mA, ZO = 50
GP Power Gain (|S21| 2)
f = 0.1 GHz
GP Gain Flatness
f = 0.1 to 1.6 GHz
f3 dB
3 dB Bandwidth
VSWR
Input VSWR
Output VSWR
f = 0.1 to 3.0 GHz
f = 0.1 to 3.0 GHz
NF 50 Noise Figure
f = 1.0 GHz
P1 dB Output Power at 1 dB Gain Compression
f = 1.0 GHz
IP3 Third Order Intercept Point
f = 1.0 GHz
tD Group Delay
f = 1.0 GHz
Vd Device Voltage
dV/dT Device Voltage Temperature Coefficient
Units Min.
dB 11.5
dB
GHz
dB
dBm
dBm
psec
V
mV/°C
4.5
Typ. Max.
12.5
± 0.6
2.7
1.6:1
1.7:1
10.0
6.0
23.0
125
5.0
–8.0
13.5
± 1.0
5.5
Notes:
1. The recommended operating current range for this device is 20 to 50 mA. Typical performance as a function of current
is on the following page.
MSA-0335, -0336 Part Number Ordering Information
Part Number
No. of Devices
Container
MSA-0335
10 Strip
MSA-0336-BLK
100 Antistatic Bag
MSA-0336-TR1
1000
7" Reel
For more information, see “Tape and Reel Packaging for Semiconductor Devices.”
6-303


Part Number MSA-0335
Description (MSA-0335 / MSA-0336) Cascadable Silicon Bipolar MMIC Amplifier
Maker Hewlett-Packard
Total Page 4 Pages
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