MSA-0400 Absolute Maximum Ratings
Parameter
Absolute Maximum[1]
Device Current
120 mA
Thermal Resistance[2,4]:
θjc = 35°C/W
Power Dissipation[2,3]
RF Input Power
Junction Temperature
Storage Temperature
850 mW
+13 dBm
200°C
–65 to 200°C
Part Number Ordering Information
Part Number
Devices Per Tray
MSA-0400-GP4
100
Electrical Specifications[1], TA = 25°C
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TMounting Surface (TMS) = 25°C.
3. Derate at 28.6 mW/°C for
TMS␣ >␣ 170 °C.
4. The small spot size of this tech-
nique results in a higher, though
more accurate determination of θjc
than do alternate methods. See
MEASUREMENTS section
“Thermal Resistance” for more
information.
Symbol
Parameters and Test Conditions[2]: Id = 90 mA, ZO = 50 Ω
Units Min. Typ. Max.
GP Power Gain (|S21| 2)
f = 0.1 GHz
dB 8.5
∆GP Gain Flatness
f = 0.1 to 2.5 GHz dB ± 0.6
f3 dB
3 dB Bandwidth
GHz 4.3
VSWR
Input VSWR
Output VSWR
f = 0.1 to 2.5 GHz
f = 0.1 to 2.5 GHz
1.7:1
1.8:1
NF 50 Ω Noise Figure
f = 1.0 GHz
dB 6.5
P1 dB
IP3
Output Power at 1 dB Gain Compression
Output Power at 1 dB Gain Compression
Third Order Intercept Point
f = 1.0 GHz, Id = 50 mA
f = 1.0 GHz, Id = 90 mA
f = 1.0 GHz
dBm
dBm
dBm
12.5
16.0
30.0
tD Group Delay
f = 1.0 GHz
psec
140
Vd Device Voltage
V 5.7 6.3 6.9
dV/dT Device Voltage Temperature Coefficient
mV/°C
–8.0
Notes:
1. The recommended operating current range for this device is 40 to 110 mA. Typical performance as a function of current
is on the following page.
2. RF performance of the chip is determined by packaging and testing 10 devices per wafer in a dual ground configuration.
Typical
Scattering
Parameters[1]
(Z
O
=
50
Ω,
T
A
=
25°C,
I
d
=
50
mA)
Freq.
GHz
S11
Mag
Ang
S21
dB Mag Ang
S12
dB Mag Ang
S22
Mag Ang
k
0.1
.18 179
8.6 2.68 177 –16.4 .151 1
.10 –13 1.37
0.5
.18 –179
8.6 2.68 163 –16.3 .153 7
.16 –54 1.34
1.0
.16 –171
8.5 2.65 145 –15.8 .161 10
.22 –83 1.28
1.5
.16 –161
8.4 2.63 127 –15.4 .169 16
.29 –101
1.19
2.0
.21 –156
8.2 2.56 109 –14.6 .187 18
.33 –119
1.07
2.5
.27 –152
7.8 2.45 98 –13.8 .205 24
.37 –128
0.98
3.0
.33 –159
7.0 2.23 82 –13.4 .213 24
.42 –140
0.91
4.0
.42 –171
5.2 1.81 54 –12.5 .237 21
.42 –151
0.86
5.0
.45 172
3.4 1.49 3 –11.7 .259 17
.38 –153
0.94
Note:
1. S-parameters are de-embedded from 70 mil package measured data using the package model found in the DEVICE
MODELS section.
6-319
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