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Hewlett-Packard
Hewlett-Packard

MSA-0400 Datasheet Preview

MSA-0400 Datasheet

Cascadable Silicon Bipolar MMIC Amplifier

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MSA-0400 pdf
Cascadable Silicon Bipolar
MMIC␣ Amplifier
Technical Data
MSA-0400
Features
• Cascadable 50 Gain Block
• 3 dB Bandwidth:
DC to 4.0 GHz
• 8.5 dB Typical Gain at
1.0␣ GHz
• 16.0␣ dBm Typical P 1 dB at
1.0␣ GHz
Description
The MSA-0400 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) chip. This MMIC is
designed for use as a general
purpose 50 gain block. Typical
applications include narrow and
broad band IF and RF amplifiers
in commercial, industrial and
military applications.
The MSA-series is fabricated using
HP’s 10 GHz fT, 25␣ GHz f MAX,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Chip Outline[1]
The recommended assembly
procedure is gold-eutectic die
attach at 400°C and either wedge
or ball bonding using 0.7 mil gold
wire. See APPLICATIONS section,
“Chip Use”.
Note:
1. Refer to the APPLICATIONS section
“Silicon MMIC Chip Use” for additional
information.
Typical Biasing Configuration
R bias
VCC > 10 V
C block
IN
MSA
RFC (Optional)
C block
Vd = 6.3 V
OUT
5965-9572E
6-318



Hewlett-Packard
Hewlett-Packard

MSA-0400 Datasheet Preview

MSA-0400 Datasheet

Cascadable Silicon Bipolar MMIC Amplifier

No Preview Available !

MSA-0400 pdf
MSA-0400 Absolute Maximum Ratings
Parameter
Absolute Maximum[1]
Device Current
120 mA
Thermal Resistance[2,4]:
θjc = 35°C/W
Power Dissipation[2,3]
RF Input Power
Junction Temperature
Storage Temperature
850 mW
+13 dBm
200°C
–65 to 200°C
Part Number Ordering Information
Part Number
Devices Per Tray
MSA-0400-GP4
100
Electrical Specifications[1], TA = 25°C
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TMounting Surface (TMS) = 25°C.
3. Derate at 28.6 mW/°C for
TMS␣ >␣ 170 °C.
4. The small spot size of this tech-
nique results in a higher, though
more accurate determination of θjc
than do alternate methods. See
MEASUREMENTS section
“Thermal Resistance” for more
information.
Symbol
Parameters and Test Conditions[2]: Id = 90 mA, ZO = 50
Units Min. Typ. Max.
GP Power Gain (|S21| 2)
f = 0.1 GHz
dB 8.5
GP Gain Flatness
f = 0.1 to 2.5 GHz dB ± 0.6
f3 dB
3 dB Bandwidth
GHz 4.3
VSWR
Input VSWR
Output VSWR
f = 0.1 to 2.5 GHz
f = 0.1 to 2.5 GHz
1.7:1
1.8:1
NF 50 Noise Figure
f = 1.0 GHz
dB 6.5
P1 dB
IP3
Output Power at 1 dB Gain Compression
Output Power at 1 dB Gain Compression
Third Order Intercept Point
f = 1.0 GHz, Id = 50 mA
f = 1.0 GHz, Id = 90 mA
f = 1.0 GHz
dBm
dBm
dBm
12.5
16.0
30.0
tD Group Delay
f = 1.0 GHz
psec
140
Vd Device Voltage
V 5.7 6.3 6.9
dV/dT Device Voltage Temperature Coefficient
mV/°C
–8.0
Notes:
1. The recommended operating current range for this device is 40 to 110 mA. Typical performance as a function of current
is on the following page.
2. RF performance of the chip is determined by packaging and testing 10 devices per wafer in a dual ground configuration.
Typical
Scattering
Parameters[1]
(Z
O
=
50
,
T
A
=
25°C,
I
d
=
50
mA)
Freq.
GHz
S11
Mag
Ang
S21
dB Mag Ang
S12
dB Mag Ang
S22
Mag Ang
k
0.1
.18 179
8.6 2.68 177 –16.4 .151 1
.10 –13 1.37
0.5
.18 –179
8.6 2.68 163 –16.3 .153 7
.16 –54 1.34
1.0
.16 –171
8.5 2.65 145 –15.8 .161 10
.22 –83 1.28
1.5
.16 –161
8.4 2.63 127 –15.4 .169 16
.29 –101
1.19
2.0
.21 –156
8.2 2.56 109 –14.6 .187 18
.33 –119
1.07
2.5
.27 –152
7.8 2.45 98 –13.8 .205 24
.37 –128
0.98
3.0
.33 –159
7.0 2.23 82 –13.4 .213 24
.42 –140
0.91
4.0
.42 –171
5.2 1.81 54 –12.5 .237 21
.42 –151
0.86
5.0
.45 172
3.4 1.49 3 –11.7 .259 17
.38 –153
0.94
Note:
1. S-parameters are de-embedded from 70 mil package measured data using the package model found in the DEVICE
MODELS section.
6-319


Part Number MSA-0400
Description Cascadable Silicon Bipolar MMIC Amplifier
Maker Hewlett-Packard
Total Page 4 Pages
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