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MSA-0470 - Cascadable Silicon Bipolar MMIC Amplifier

Download the MSA-0470 datasheet PDF. This datasheet also covers the MSA-0470_Hewlett variant, as both devices belong to the same cascadable silicon bipolar mmic amplifier family and are provided as variant models within a single manufacturer datasheet.

Description

The MSA-0470 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic, high reliability package.

This MMIC is designed for use as a general purpose 50 Ω gain block.

Features

  • Cascadable 50 Ω Gain Block.
  • 3 dB Bandwidth: DC to 4.0 GHz.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MSA-0470_Hewlett-Packard.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MSA-0470
Manufacturer Hewlett-Packard
File Size 68.41 KB
Description Cascadable Silicon Bipolar MMIC Amplifier
Datasheet download datasheet MSA-0470 Datasheet

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Other Datasheets by Hewlett-Packard

Part Number Description
MSA-0400 Cascadable Silicon Bipolar MMIC Amplifier
MSA-0404 Cascadable Silicon Bipolar MMIC Amplifier
MSA-0420 Cascadable Silicon Bipolar MMIC Amplifier
MSA-0435 (MSA-0435 / MSA-0436) Cascadable Silicon Bipolar MMIC Amplifier
MSA-0436 (MSA-0435 / MSA-0436) Cascadable Silicon Bipolar MMIC Amplifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Agilent MSA-0470 Cascadable Silicon Bipolar MMIC Amplifier Data Sheet Features • Cascadable 50 Ω Gain Block • 3 dB Bandwidth: DC to 4.0 GHz Description The MSA-0470 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic, high reliability package. This MMIC is designed for use as a general purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in industrial and military applications. The MSA-series is fabricated using Agilent’s 10 GHz fT, 25 GHz fMAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability.
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