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MSA-0685 - Cascadable Silicon Bipolar MMIC Amplifier

Download the MSA-0685 datasheet PDF. This datasheet also covers the MSA-0685_Hewlett variant, as both devices belong to the same cascadable silicon bipolar mmic amplifier family and are provided as variant models within a single manufacturer datasheet.

Description

The MSA-0685 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost Typical Biasing Configuration R bias VCC > 5 V RFC (Optional) 4 C block 3 IN 1 MSA C block OUT Vd = 3.5 V 2 5965-9587E 6-378 MSA-0685 Absolute Maximum Ratings Parameter Devic

Features

  • Cascadable 50 Ω Gain Block.
  • Low Operating Voltage: 3.5 V Typical Vd.
  • 3 dB Bandwidth: DC to 0.8 GHz.
  • High Gain: 18.5␣ dB Typical at 0.5 GHz.
  • Low Noise Figure: 3.0 dB Typical at 0.5 GHz.
  • Low Cost Plastic Package plastic package. This MMIC is designed for use as a general purpose 50 Ω gain block. Typical.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MSA-0685_Hewlett-Packard.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MSA-0685
Manufacturer Hewlett-Packard
File Size 52.89 KB
Description Cascadable Silicon Bipolar MMIC Amplifier
Datasheet download datasheet MSA-0685 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-0685 Features • Cascadable 50 Ω Gain Block • Low Operating Voltage: 3.5 V Typical Vd • 3 dB Bandwidth: DC to 0.8 GHz • High Gain: 18.5␣ dB Typical at 0.5 GHz • Low Noise Figure: 3.0 dB Typical at 0.5 GHz • Low Cost Plastic Package plastic package. This MMIC is designed for use as a general purpose 50 Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in commercial and industrial applications. The MSA-series is fabricated using HP’s 10 GHz fT, 25␣ GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability.
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