datasheet4u.com

900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf





Hewlett-Packard
Hewlett-Packard

MSA-0870 Datasheet Preview

MSA-0870 Datasheet

Cascadable Silicon Bipolar MMIC Amplifier

No Preview Available !

MSA-0870 pdf
Agilent MSA-0870
Cascadable Silicon Bipolar
MMIC Amplifier
Data Sheet
Description
The MSA-0870 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a hermetic, high
reliability package. This MMIC is
designed for use as a general
purpose 50 gain block above
0.5 GHz and can be used as a high
gain transistor below this fre-
quency. Typical applications
include narrow and moderate band
IF and RF amplifiers in industrial
and military applications.
The MSA-series is fabricated using
Agilents 10 GHz fT, 25 GHz fMAX,
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
70 mil Package
Features
Usable Gain to 6.0 GHz
High Gain:
32.5 dB Typical at 0.1 GHz
23.5 dB Typical at 1.0 GHz
Low Noise Figure:
3.0 dB Typical at 1.0 GHz
Hermetic Gold-ceramic
Microstrip Package
Typical Biasing Configuration
R bias
VCC > 10 V
C block
IN
4
3
1 MSA
2
RFC (Optional)
C block
Vd = 7.8 V
OUT



Hewlett-Packard
Hewlett-Packard

MSA-0870 Datasheet Preview

MSA-0870 Datasheet

Cascadable Silicon Bipolar MMIC Amplifier

No Preview Available !

MSA-0870 pdf
2
MSA-0870 Absolute Maximum Ratings
Parameter
Absolute Maximum[1]
Device Current
80 mA
Power Dissipation[2,3]
750 mW
RF Input Power
Junction Temperature
Storage Temperature
+13 dBm
200°C
65°C to 200°C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 6.7 mW/°C for TC > 88°C.
4. The small spot size of this technique results in a higher, though more
accurate determination of θjc than do alternate methods.
Thermal Resistance[2,4]:
θjc = 150°C/W
Electrical Specifications[1], TA = 25°C
Symbol
Parameters and Test Conditions: Id = 36 mA, ZO = 50
GP Power Gain (|S21| 2)
f = 0.1 GHz
f = 1.0 GHz
f = 4.0 GHz
VSWR
Input VSWR
Output VSWR
f = 1.0 to 3.0 GHz
f = 1.0 to 3.0 GHz
NF 50 Noise Figure
f = 1.0 GHz
P1 dB Output Power at 1 dB Gain Compression
f = 1.0 GHz
IP3 Third Order Intercept Point
f = 1.0 GHz
tD Group Delay
f = 1.0 GHz
Vd Device Voltage
dV/dT Device Voltage Temperature Coefficient
Units Min.
dB
22.0
dB
dBm
dBm
psec
V
mV/°C
7.0
Typ. Max.
32.5
23.5
11.0
2.0:1
1.9:1
3.0
12.5
27.0
125
7.8
17.0
25.0
12.0
8.4
Note:
1. The recommended operating current range for this device is 20 to 40 mA. Typical performance as a function of current
is on the following page.


Part Number MSA-0870
Description Cascadable Silicon Bipolar MMIC Amplifier
Maker Hewlett-Packard
Total Page 4 Pages
PDF Download
MSA-0870 pdf
MSA-0870 Datasheet PDF
[partsNo] view html
View PDF for Mobile








Similar Datasheet

1 MSA-0870 Cascadable Silicon Bipolar MMIC Amplifier Hewlett-Packard
Hewlett-Packard
MSA-0870 pdf





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy