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MSA-0870 - Cascadable Silicon Bipolar MMIC Amplifier

Download the MSA-0870 datasheet PDF. This datasheet also covers the MSA-0870_Hewlett variant, as both devices belong to the same cascadable silicon bipolar mmic amplifier family and are provided as variant models within a single manufacturer datasheet.

Description

The MSA-0870 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic, high reliability package.

This MMIC is designed for use as a general purpose 50 Ω gain block above 0.5 GHz and can be used as a high gain transistor below this frequency.

Features

  • Usable Gain to 6.0 GHz.
  • High Gain: 32.5 dB Typical at 0.1 GHz 23.5 dB Typical at 1.0 GHz.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MSA-0870_Hewlett-Packard.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MSA-0870
Manufacturer Hewlett-Packard
File Size 68.88 KB
Description Cascadable Silicon Bipolar MMIC Amplifier
Datasheet download datasheet MSA-0870 Datasheet

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Other Datasheets by Hewlett-Packard

Part Number Description
MSA-0800 Cascadable Silicon Bipolar MMIC Amplifier
MSA-0835 (MSA-0835 / MSA-0836) Cascadable Silicon Bipolar MMIC Amplifier
MSA-0836 (MSA-0835 / MSA-0836) Cascadable Silicon Bipolar MMIC Amplifier
MSA-0885 Cascadable Silicon Bipolar MMIC Amplifier
MSA-0886 Cascadable Silicon Bipolar MMIC Amplifier

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Agilent MSA-0870 Cascadable Silicon Bipolar MMIC Amplifier Data Sheet Features • Usable Gain to 6.0 GHz • High Gain: 32.5 dB Typical at 0.1 GHz 23.5 dB Typical at 1.0 GHz Description The MSA-0870 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a hermetic, high reliability package. This MMIC is designed for use as a general purpose 50 Ω gain block above 0.5 GHz and can be used as a high gain transistor below this frequency. Typical applications include narrow and moderate band IF and RF amplifiers in industrial and military applications. 70 mil Package • Low Noise Figure: 3.0 dB Typical at 1.
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