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Hewlett-Packard

MSA1105 Datasheet Preview

MSA1105 Datasheet

Cascadable Silicon Bipolar MMIC Amplifier

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Cascadable Silicon Bipolar
MMIC Amplifier
Technical Data
MSA-1105
Features
• High Dynamic Range
Cascadable 50 or 75
Gain Block
• 3 dB Bandwidth:
50 MHz to 1.3 GHz
• 17.5 dBm Typical P1 dB at
0.5 GHz
• 3.6 dB Typical Noise Figure
at 0.5 GHz
• Surface Mount Plastic
Package
• Tape-and-Reel Packaging
Option Available[1]
Note:
1. Refer to PACKAGING section “Tape-
and-Reel Packaging for Semiconduc-
tor Devices.”
Description
The MSA-1105 is a high perfor-
mance silicon bipolar Monolithic
Microwave Integrated Circuit
(MMIC) housed in a low cost,
surface mount plastic package.
This MMIC is designed for high
dynamic range in either 50 or 75
systems by combining low noise
figure with high IP3. Typical
applications include narrow and
broadband linear amplifiers in
commercial and industrial systems.
05 Plastic Package
The MSA-series is fabricated using
Agilent’s 10 GHz fT, 25 GHz fMAX
silicon bipolar MMIC process
which uses nitride self-alignment,
ion implantation, and gold metalli-
zation to achieve excellent
performance, uniformity and
reliability. The use of an external
bias resistor for temperature and
current stability also allows bias
flexibility.
Typical Biasing Configuration
R bias
VCC > 8 V
C block
IN
4
1 MSA
2
3
RFC (Optional)
C block
Vd = 5.5 V
OUT




Hewlett-Packard

MSA1105 Datasheet Preview

MSA1105 Datasheet

Cascadable Silicon Bipolar MMIC Amplifier

No Preview Available !

2
MSA-1105 Absolute Maximum Ratings
Parameter
Absolute Maximum[1]
Device Current
80 mA
Power Dissipation[2,3]
550 mW
RF Input Power
Junction Temperature
Storage Temperature
+13 dBm
150°C
–65 to 150°C
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 8 mW/°C for TC > 124°C.
4. See MEASUREMENTS section “Thermal Resistance” for more information.
Thermal Resistance[2,4]:
θjc = 125°C/W
Electrical Specifications[1], TA = 25°C
Symbol
Parameters and Test Conditions: Id = 60 mA, ZO = 50
GP Power Gain (|S21| 2)
f = 0.05 GHz
f = 0.5 GHz
f = 1.0 GHz
GP
f3 dB
Gain Flatness
3 dB Bandwidth[2]
f = 0.1 to 1.0 GHz
VSWR
Input VSWR
Output VSWR
f = 0.1 to 1.0 GHz
f = 0.1 to 1.0 GHz
NF 50 Noise Figure
f = 0.5 GHz
P1 dB Output Power at 1 dB Gain Compression
f = 0.5 GHz
IP3 Third Order Intercept Point
f = 0.5 GHz
tD Group Delay
f = 0.5 GHz
Vd Device Voltage
dV/dT Device Voltage Temperature Coefficient
Units Min.
dB
dB 10.0
dB
dB
GHz
dB
dBm
dBm
psec
V
mV/°C
4.4
Typ. Max.
12.7
12.0
10.5
±1.0
1.3
1.5:1
1.7:1
3.6
17.5
30.0
200
5.5
–8.0
6.6
Notes:
1. The recommended operating current range for this device is 40 to 70 mA. Typical performance as a function of current
is on the following page.
2. Referenced from 50 MHz gain (GP).
Part Number Ordering Information
Part Number
No. of Devices
Container
MSA-1105-TR1
500
7" Reel
MSA-1105-STR
10 Antistatic Bag
For more information, see “Tape and Reel Packaging for Semiconductor Devices”.


Part Number MSA1105
Description Cascadable Silicon Bipolar MMIC Amplifier
Maker Hewlett-Packard
Total Page 4 Pages
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