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Hexawave

HWL34YRF Datasheet Preview

HWL34YRF Datasheet

L-Band GaAs Power FET

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Features
Low Cost GaAs Power FET
Class A or Class AB Operation
Greater than 14.5 dB Gain
5V to 10V Operation
Description
The HWL34YRF is a Power GaAs FET designed for
various L-band & S-band applications. It is
presently offered in low cost ceramic package.
Absolute Maximum Ratings
VDS Drain to Source Voltage
VGS Gate to Source Voltage
ID Drain Current
IG Gate Current
TCH Channel Temperature
TSTG Storage Temperature
PT* Power Dissipation
* mounted on an infinite heat sink.
+15V
-5V
IDSS
6mA
175°C
-65 to +175°C
12W
HWL34YRF
L-Band GaAs Power FET
Autumn 2002 V1
RF Package (Ceramic)
Outline Dimensions
Electrical Specifications (TA=25°C) f = 2400 MHz for all RF Tests
Symbol
Parameters & Conditions
IDSS
Saturated Current at VDS=3V, VGS=0V
VP
Pinch-off Voltage at VDS=3V, ID=60mA
gm
Transconductance at VDS=3V, ID=600mA
Rth
Thermal Resistance, Channel to case*
P1dB
Power Output at Test Points
VDS=10V, ID=0.5IDSS
G1dB
Gain at 1dB Compression Point
VDS=10V, ID=0.5IDSS
PAE
Power-Added Efficiency (Pout = P1dB)
VDS=10V, ID=0.5IDSS
* Device mounted on an infinite heat sink.
Units
mA
V
mS
°C/W
dBm
dB
%
Min.
900
-3.5
-
-
33
13.5
35
Typ.
1200
-2.0
700
9
34
14.5
45
Max.
1600
-1.5
-
12
-
-
-
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice.




Hexawave

HWL34YRF Datasheet Preview

HWL34YRF Datasheet

L-Band GaAs Power FET

No Preview Available !

Typical Performance at 25°C
HWL34YRF
L-Band GaAs Power FET
Autumn 2002 V1
Output Power & Efficiency & Gain vs Input Power
@ f=1.9 GHz, Vds=10V, Ids = 0.5 Idss
Po (dBm)
35
PAE (%)
50
30
25
20
15
Gain
10
5
40
30
Po
Gain
20
Eff
10
0
0
0
4
8
12
16
20
24 Pin (dBm)
Output Power & Efficiency & Gain vs Input Power
@ f=2.4 GHz, Vds=10V, Ids = 0.5 Idss
Po (dBm)
35
PAE (%)
60
30
25
20
15
Gain
10
5
50
Po
40
Gain
Eff
30
20
10
0
0
0
4
8
12
16
20
24 Pin (dBm)
Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512
http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice.



Part Number HWL34YRF
Description L-Band GaAs Power FET
Maker Hexawave
Total Page 3 Pages
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HWL34YRF Datasheet PDF





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