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H03N60 - N-Channel Power Field Effect Transistor

Download the H03N60 datasheet PDF. This datasheet also covers the H03N60_Hi variant, as both devices belong to the same n-channel power field effect transistor family and are provided as variant models within a single manufacturer datasheet.

Description

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time.

In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes.

Features

  • H03N60 Series Symbol:.
  • Robust High Voltage Termination.
  • Avalanc he Energy Specified.
  • Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode.
  • Diode is Characterized for Use in Bridge Circuits.
  • IDSS and VDS(on) Specified at Elevated Temperature Absolute Maximum Ratings Symbol ID IDM VGS Parameter Drain to Current (Continuous) Drain to Current (Pulsed) Gate-to-Source Voltage (Continue) Total Power Dissipation (TC=25 C) H03N60.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (H03N60_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number H03N60
Manufacturer Hi-Sincerity Mocroelectronics
File Size 92.33 KB
Description N-Channel Power Field Effect Transistor
Datasheet download datasheet H03N60 Datasheet

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Full PDF Text Transcription

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www.DataSheet4U.com HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200602 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 1/5 H03N60 Series N-Channel Power Field Effect Transistor H03N60 Series Pin Assignment Tab Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time.
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