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H03N60 - N-Channel Power Field Effect Transistor

Download the H03N60 datasheet PDF. This datasheet also covers the H03N60_Hi variant, as both devices belong to the same n-channel power field effect transistor family and are provided as variant models within a single manufacturer datasheet.

General Description

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time.

In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes.

Key Features

  • H03N60 Series Symbol:.
  • Robust High Voltage Termination.
  • Avalanc he Energy Specified.
  • Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode.
  • Diode is Characterized for Use in Bridge Circuits.
  • IDSS and VDS(on) Specified at Elevated Temperature Absolute Maximum Ratings Symbol ID IDM VGS Parameter Drain to Current (Continuous) Drain to Current (Pulsed) Gate-to-Source Voltage (Continue) Total Power Dissipation (TC=25 C) H03N60.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (H03N60_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number H03N60
Manufacturer Hi-Sincerity Mocroelectronics
File Size 92.33 KB
Description N-Channel Power Field Effect Transistor
Datasheet download datasheet H03N60 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200602 Issued Date : 2006.02.01 Revised Date : 2006.02.07 Page No. : 1/5 H03N60 Series N-Channel Power Field Effect Transistor H03N60 Series Pin Assignment Tab Description This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time.