• Part: H03N60
  • Manufacturer: Hi-Sincerity Mocroelectronics
  • Size: 92.33 KB
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H03N60 Key Features

  • Robust High Voltage Termination
  • Avalanc he Energy Specified
  • Source-to-Drain Diode Recovery Time parable to a Discrete Fast Recovery Diode
  • Diode is Characterized for Use in Bridge Circuits
  • IDSS and VDS(on) Specified at Elevated Temperature

H03N60 Description

This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and mutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time.