| Title | Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 3A; 29W; TO251S2 |
| Description | This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power suplies, converters, power motor controls and bridge circuits. 1 2 3 3-Lead Plastic TO-220AB Package Code: E Pin 1: Ga... |
| Features |
• Higher Current Rating • Lower RDS(on) • Lower Capacitances • Lower Total Gate Charge • Tighter VSD Specifications • Avalanche Energy Specified 1 2 3 3-Lead Plastic TO-220FP Package Code: F Pin 1: Gate Pin 2: Drain Pin 3: Source D G S H04N60 Series Symbol: Absolute Maximum Ratings Symbol ID IDM VGS Parameter Drain to Current (Continuous) Drain... |
| Datasheet |
 H04N60 Datasheet - 108.96KB |
| Distributor |
TME |
| Stock | 0 In stock |
| Price |
504 units: 0.23 USD 250 units: 0.25 USD 100 units: 0.26 USD 25 units: 0.28 USD 5 units: 0.32 USD 1 units: 0.53 USD
|
| BuyNow |
 No Longer Stocked - Manufacturer a Cyg Wayon Circuit Protection Co Ltd WMH04N60C2
|
| Distributor | Stock | Price | BuyNow |
|---|---|---|---|
TME |
504 units: 0.23 USD 250 units: 0.25 USD 100 units: 0.26 USD 25 units: 0.28 USD 5 units: 0.32 USD 1 units: 0.53 USD |
||
 Richardson RFPD |
No price available |
