Datasheet Details
| Part number | H04N60 |
|---|---|
| Manufacturer | Hi-Sincerity Mocroelectronics |
| File Size | 108.96 KB |
| Description | N-Channel Power Field Effect Transistor |
| Datasheet |
 H04N60 Datasheet
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General Description
This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently.
This new high energy device also offers a drain-to-source diode with fast recovery time.
Key Features
- Higher Current Rating.
- Lower RDS(on).
- Lower Capacitances.
- Lower Total Gate Charge.
- Tighter VSD Specifications.
- Avalanche Energy Specified 1 2 3 3-Lead Plastic TO-220FP Package Code: F Pin 1: Gate Pin 2: Drain Pin 3: Source D G S H04N60 Series Symbol: Absolute Maximum Ratings Symbol ID IDM VGS Parameter Drain to Current (Continuous) Drain to Current (Pulsed) Gate-to-Source Voltage (Continue) Total Power Dissipation (TC=25oC) H04N60E (TO-2.