H04N60 Datasheet | Hi-Sincerity Mocroelectronics

Description This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power suplies, converters, power motor controls and bridge circuits. 1 2 3 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source Features - Higher Current Rating - Lower RDS(on) - Lower Capacitances - Lower Total Gate Charge - Tighter VSD Specifications - Avalanche Energy Specified 1 2 3 3-Lead Plastic TO-220FP Package Code: F Pin 1: Gate Pin 2: Drain Pin 3: Source H04N60 Series Symbol: Absolute Maximum Ratings Symbol ID IDM VGS Parameter Drain to Current (Continuous) Drain to Current (Pulsed) Gate-to-Source Voltage (Continue) Total Power Dissipation (TC=25o C) H04N60E (TO-220AB) PD H04N60F (TO-220FP) Derate above 25°C H04N60E (TO-220AB) H04N60F (TO-220FP) Tj, Tstg EAS TL Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25°C (VDD=100V, VGS=10V, IL=2A, L=10m H, RG=25Ω) Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds 0.56 0.2 -55 to 150 250 260 °C m J °C W/°C 70 30 W Value 4 16 ±30 Units A A V H04N60E, H04N60F HSMC Product Specification ..net ..net HI-SINCERITY MICROELECTRONICS CORP. Thermal Characteristics Symbol RθJC RθJA Parameter Thermal Resistance Junction to Case Max. Thermal Resistance Junction to Ambient Max. TO-220AB TO-220FP 62.5 Value Spec. No. : MOS200404 Issued Date : 2004.07.01 Revised Date : 2005.09.28 Page No. : 2/5 Units 1.3 5 °C/W °C/W ELectrical Characteristics (Tj=25°C, unless otherwise specified) Symbol V(BR)DSS IDSS IGSSF IGSSR VGS(th) RDS(on) g FS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd LD LS Characteristic Drain-Source Breakdown Voltage (VGS=0V, ID=250u A) Drain-Source Leakage Current (VDS=600V, VGS=0V) Drain-Source Leakage Current (VDS=480V,...