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H04N60, H04N60_Hi - N-Channel Power Field Effect Transistor

Hi-Sincerity Mocroelectronics

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H04N60 Datasheet Preview — This datasheet PDF includes multiple part numbers: H04N60, H04N60_Hi. Please refer to the document for exact specifications by model.

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Datasheet Details

Part number	H04N60, H04N60_Hi
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	108.96 KB
Description	N-Channel Power Field Effect Transistor
Datasheet	H04N60_Hi-SincerityMocroelectronics.pdf
Note	This datasheet PDF includes multiple part numbers: H04N60, H04N60_Hi. Please refer to the document for exact specifications by model.

H04N60 Product details

Description

This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently.

Features

Higher Current Rating.
Lower RDS(on).
Lower Capacitances.
Lower Total Gate Charge.
Tighter VSD Specifications.
Avalanche Energy Specified 1 2 3 3-Lead Plastic TO-220FP Package Code: F Pin 1: Gate Pin 2: Drain Pin 3: Source D G S H04N60 Series Symbol: Absolute Maximum Ratings Symbol ID IDM VGS Parameter Drain to Current (Continuous) Drain to Current (Pulsed) Gate-to-Source Voltage (Continue) Total Power Dissipation (TC=25oC) H04N60E (TO-2.

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Published: Aug 16, 2011 |