H4422S Overview
Key Features
- RDS(on)=13.5mΩ@VGS=10V, ID=11A
- RDS(on)=24mΩ@VGS=4.5V, ID=5A
- Advanced trench process technology
- High Density Cell Design for Ultra Low On-Resistance 5 6 7 8 4 3 2 1 Pin 1 / 2 / 3: Source Pin 4: Gate Pin 5 / 6 / 7 / 8: Drain
