H4422S Datasheet N-channel Enhancement-mode MOSFET

Manufacturer: Hi-Sincerity Mocroelectronics

Overview: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200907 Issued Date : 2009.03.09 Revised Date : Page No.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	H4422S
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	169.22 KB
Description	N-Channel Enhancement-Mode MOSFET
Datasheet	H4422S H4422S_Hi Datasheet (PDF)

Key Features

RDS(on)=13.5mΩ@VGS=10V, ID=11A.
RDS(on)=24mΩ@VGS=4.5V, ID=5A.
Advanced trench process technology.
High Density Cell Design for Ultra Low On-Resistance 5 6 7 8 4 3 2 1 Pin 1 / 2 / 3: Source Pin 4: Gate Pin 5 / 6 / 7 / 8: Drain Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Symbol VDS VGS ID IDM PD Tj, Tstg RθJA Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous) Drain Current (Pulsed).
1 o Parameter Ratings 30 ±20 11 50 2.

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