Datasheet4U.com

H4422S - N-Channel Enhancement-Mode MOSFET

Product Overview

Hi-Sincerity Mocroelectronics

📥 Download Datasheet

H4422S N-Channel Enhancement-Mode MOSFET by Hi-Sincerity Mocroelectronics - Datasheet Preview — Datasheet preview – H4422S

Datasheet Details

Part number	H4422S
Manufacturer	Hi-Sincerity Mocroelectronics
File Size	169.22 KB
Description	N-Channel Enhancement-Mode MOSFET
Datasheet	H4422S Datasheet
Note	This datasheet PDF includes multiple part numbers: H4422S, H4422S_Hi. Please refer to the document for exact specifications by model.
Additional preview pages of the H4422S datasheet.

Product details

Features

RDS(on)=13.5mΩ@VGS=10V, ID=11A.
RDS(on)=24mΩ@VGS=4.5V, ID=5A.
Advanced trench process technology.
High Density Cell Design for Ultra Low On-Resistance 5 6 7 8 4 3 2 1 Pin 1 / 2 / 3: Source Pin 4: Gate Pin 5 / 6 / 7 / 8: Drain Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Symbol VDS VGS ID IDM PD Tj, Tstg RθJA Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous) Drain Current (Pulsed).
1 o Parameter Ratings 30 ±20 11 50 2.

📁 Similar Datasheet

H445CHXX - PHASE CONTROL THYRISTOR (Hind Rectifiers)
H445VAN01.0 - COLOR TFT-LCD MODULE (AUO)
H446TAN03.0 - COLOR TFT-LCD MODULE (AUO)

Other Datasheets by Hi-Sincerity Mocroelectronics

H4435S - P-Channel Enhancement-Mode MOSFET

Published: Dec 1, 2013 |