n-channel enhancement-mode mosfet.
* RDS(on)=15mΩ@VGS=10V, ID=25A
* RDS(on)=20mΩ@VGS=4.5V, ID=25A www.DataSheet4U.com
* Advanced trench process technology
* High Density Cell Design for Ult.
or systems.
* HSMC assumes no liability for any consequence of customer product design, infringement of patents, or.
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