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H6968S - Dual N-Channel MOSFET

Download the H6968S datasheet PDF. This datasheet also covers the H6968CS_Hi variant, as both devices belong to the same dual n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Features

  • RDS(on)=32mΩ@VGS=2.5V, ID=5.5A.
  • RDS(on)=24mΩ@VGS=4.5V, ID=6.5A.
  • Advanced Trench Process Technology.
  • High Density Cell Design for Ultra Low On-Resistance.
  • Specially Designed for Li ion Battery Packs Use.
  • Designed for Battery Switch Appliactions.
  • ESD Protected Absolute Maximum Ratings (T =25 C, unless otherwise noted) o A Symbol VDS VGS ID IDM PD Tj, Tstg RθJA Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous) Drain.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (H6968CS_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number H6968S
Manufacturer Hi-Sincerity Mocroelectronics
File Size 78.98 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet H6968S Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by Hi-Sincerity Mocroelectronics

Part Number Description
H6968CS Dual N-Channel MOSFET
H6968CTS Dual N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200510 Issued Date : 2005.10.01 Revised Date : 2005.10.06 Page No. : 1/4 H6968S / H6968CS Dual N-Channel Enhancement-Mode MOSFET (20V, 6.5A) (Battery Switch, ESD Protected) • 8-Lead Plastic SO-8 Package Code: S Features • RDS(on)=32mΩ@VGS=2.5V, ID=5.5A • RDS(on)=24mΩ@VGS=4.5V, ID=6.5A • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for Li ion Battery Packs Use • Designed for Battery Switch Appliactions • ESD Protected Absolute Maximum Ratings (T =25 C, unless otherwise noted) o A Symbol VDS VGS ID IDM PD Tj, Tstg RθJA Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous) Drain Current (Pulsed) *1 Parameter Ratings 20 ±12 6.5 30 2 1.
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