| Description | www.DataSheet4U.com HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200510 Issued Date : 2005.10.01 Revised Date : 2005.10.06 Page No. : 1/4 H6968S / H6968CS Dual N-Channel Enhancement-Mode MOSFET (20V, 6.5A) (Battery Switch, ESD Protected) • 8-Lead Plastic SO-8 Package Code: S Features • RDS(on)=32mΩ@VGS=2.5V, ID=5.5A • RDS(on)=24mΩ@VGS=4.5V, ID=6.5A • Advanced Trench Process Technology • ... |
| Features |
• RDS(on)=32mΩ@VGS=2.5V, ID=5.5A • RDS(on)=24mΩ@VGS=4.5V, ID=6.5A • Advanced Trench Process Technology • High Density Cell Design for Ultra Low On-Resistance • Specially Designed for Li ion Battery Packs Use • Designed for Battery Switch Appliactions • ESD Protected Absolute Maximum Ratings (T =25 C, unless otherwise noted) o A Symbol VDS VGS ID ... |
| Datasheet |
 H6968S Datasheet - 78.98KB |
