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1SS165 - Silicon Schottky Barrier Diode

Features

  • Low capacitance. (C = 1.0pF max).
  • Small glass package (MHD) enables easy mounting and high reliability. Ordering Information Type No. 1SS165 Cathode band Green Package Code MHD ADE-208-397 (Z) Rev. 0 Oct. 1995 Outline 1 2 Cathode band 1. Cathode 2. Anode Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Average forward current Peak forward current Power dissipation Junction temperature Storage temperature Symbol VR IO IFM Pd Tj Tstg Value 10 15 35 150 100.

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Datasheet Details

Part number 1SS165
Manufacturer Hitachi (now Renesas)
File Size 21.95 KB
Description Silicon Schottky Barrier Diode
Datasheet download datasheet 1SS165 Datasheet
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1SS165 Silicon Schottky Barrier Diode for CATV Balanced Mixer Features • Low capacitance. (C = 1.0pF max) • Small glass package (MHD) enables easy mounting and high reliability. Ordering Information Type No. 1SS165 Cathode band Green Package Code MHD ADE-208-397 (Z) Rev. 0 Oct. 1995 Outline 1 2 Cathode band 1. Cathode 2. Anode Absolute Maximum Ratings (Ta = 25°C) Item Reverse voltage Average forward current Peak forward current Power dissipation Junction temperature Storage temperature Symbol VR IO IFM Pd Tj Tstg Value 10 15 35 150 100 –55 to +100 Unit V mA mA mW °C °C 1SS165 Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Forward voltage Reverse current Capacitance VF1 365 — 430 VF2 520 — 600 IR1 — — 0.2 IR2 — — 10 C — — 1.
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