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2SJ177 - Silicon P-Channel MOSFET

Hitachi Semiconductor (now Renesas)

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2SJ177 silicon p-channel mosfet by Hitachi Semiconductor (now Renesas) - Datasheet Preview

Datasheet Details

Part number	2SJ177
Manufacturer	Hitachi Semiconductor (now Renesas)
File Size	29.96 KB
Description	Silicon P-Channel MOSFET
Datasheet	2SJ177 Datasheet

Overview

2SJ177 Silicon P-Channel MOS FET Application High speed power.

Key Features

Low on-resistance.
High speed switching.
Low drive current.
4 V gate drive device  Can be driven from 5 V source.
Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline November 1996 TO-220FM D 12 3 1. Gate G 2. Drain 3. Source S 2SJ177 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipatio.

📁 Similar Datasheet

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	2SJ177	P-Channel MOSFET	VBsemi

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