• Part: HE7601SG
  • Description: GaAlAs Infrared Emitting Diode
  • Manufacturer: Hitachi Semiconductor
  • Size: 212.84 KB
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Datasheet Summary

.. GaAlAs Infrared Emitting Diode ODE-208-996B (Z) Rev.2 Mar. 2005 Description The HE7601SG is a 770 nm band GaAlAs infrared emitting diode with a double heterojunction structure. It is suitable as a light source for optical control devices and sensors. Features - High efficiency and high output power Package Type - HE7601SG: SG1 Internal...