Datasheet Details
| Part number | HE8811 |
|---|---|
| Manufacturer | Hitachi Semiconductor (now Renesas) |
| File Size | 212.31 KB |
| Description | GaAlAs Infrared Emitting Diode |
| Datasheet |
 HE8811 Datasheet
|
|
|
Description
The HE8811 is a GaAlAs infrared emitting diode with a double heterojunction structure.
It is high brightness, high output power and fast response make it suitable as a light source in measuring instruments and infrared-beam communication equipment.
Features
- High-frequency response.
- High efficiency and high output power.
- Broad radiation pattern Package Type.
- HE8811: SG1 Internal Circuit 1 2 HE8811 Absolute Maximum Ratings (TC = 25°C) Item Forward current Reverse voltage Operating temperature Storage temperature Symbol IF VR Topr Tstg Value 200 3.
- 20 to +60.
- 40 to +90 Unit mA V °C °C Optical and Electrical Characteristics (TC = 25°C) Item Optical output power Peak wavelength Spectral width Forwa.