• Part: HE8811
  • Description: GaAlAs Infrared Emitting Diode
  • Manufacturer: Hitachi Semiconductor
  • Size: 212.31 KB
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Datasheet Summary

.. GaAlAs Infrared Emitting Diode ODE-208-999B (Z) Rev.2 Mar. 2005 Description The HE8811 is a GaAlAs infrared emitting diode with a double heterojunction structure. It is high brightness, high output power and fast response make it suitable as a light source in measuring instruments and infrared-beam munication equipment. Features - High-frequency response - High efficiency and high output power - Broad radiation pattern Package Type - HE8811: SG1 Internal...