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HM5216805 - SDRAM

General Description

All inputs and outputs are referred to the rising edge of the clock input.

The HM5216805 Series, HM5216405 Series are offered in 2 banks for improved performance.

Key Features

  • 3.3V Power supply.
  • Clock frequency: 100 MHz/83 MHz/66 MHz (max).
  • LVTTL interface.
  • Single pulsed RAS.
  • 2 Banks can operates simultaneously and independently.
  • Burst read/write operation and burst read/single write operation capability.
  • Programmable burst length: 1/2/4/8/full page.
  • 2 variations of burst sequence  Sequential (BL = 1/2/4/8/full page)  Interleave (BL = 1/2/4/8).
  • Programmable CAS latency: 1/2/3.

📥 Download Datasheet

More Datasheets from Hitachi Semiconductor (now Renesas)

Part Number Description
HM5216405 SDRAM
HM5241605 SDRAM
HM5264165F-A60 64M LVTTL interface SDRAM
HM5264165F-B60 64M LVTTL interface SDRAM
HM5264405F-75 64M LVTTL interface SDRAM
HM5264405F-A60 64M LVTTL interface SDRAM
HM5264405F-B60 64M LVTTL interface SDRAM
HM50256 262144 X 1-Bit DRAM
HM50256CP 262144 X 1-Bit DRAM
HM50256P 262144 X 1-Bit DRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HM5216805 Series, HM5216405 Series 1,048,576-word × 8-bit × 2-bank Synchronous Dynamic RAM 2,097,152-word × 4-bit × 2-bank Synchronous Dynamic RAM ADE-203-304B (Z) Rev. 2.0 Dec. 10, 1996 Description All inputs and outputs are referred to the rising edge of the clock input. The HM5216805 Series, HM5216405 Series are offered in 2 banks for improved performance. Features • 3.