HZU6.8L
HZU6.8L is Silicon Epitaxial Planar Zener Diode for Surge Absorb manufactured by Hitachi Semiconductor.
Features
- Lower reverse current leakage pared with conventional products.
- Ultra small Resin Package (URP) is suitable for surface mount design.
Ordering Information
Type No. HZU6.8L Laser Mark 68C Package Code URP
Outline
Cathode mark Mark 1
68C
2 1. Cathode 2. Anode
Absolute Maximum Ratings (Ta = 25°C)
Item Power dissipation Junction temperature Storage temperature Note 1. See Fig.2. Symbol Pd Tj Tstg
- 1
Value 200 150 -55 to +150
Unit m W °C °C
Electrical Characteristics (Ta = 25°C)
Item Zener voltage Reverse current Dynamic resistance Symbol VZ IR rd Min 6.47
- - Typ
- -
- Max 7.14 20 30 Unit V n A Ω Test Condition I Z = 5 m A, 40ms pulse VR = 5.0V I Z = 5 m A
Main Characteristic
10 -2 10 -3
Polyimide board 20hx15wx0.8t
Power Dissipation Pd (m W)
(A)
10 -4 10-5 10 10 10 10 10
-6
Iz
1.5 unit: mm
Zener Current
-7 -8
-9
-10
10-11 0 2 4 6 8 10 Zener Voltage Vz...
