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HZU6.8Z - Silicon Epitaxial Planar Zener Diode for Surge Absorb

Features

  • Low capacitance (C=25pF max) and can protect ESD of signal line.
  • Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information Type No. HZU6.8Z Laser Mark 68Z Package Code URP Outline Cathode mark Mark 1 68Z 2 1. Cathode 2. Anode HZU6.8Z Absolute Maximum Ratings (Ta = 25°C) Item Power dissipation Junction temperature Storage temperature Note 1. See Fig.2. Symbol Pd Tj Tstg.
  • 1 Value 200 150 -55 to +150 Unit mW °C °C Electrical Characte.

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Datasheet Details

Part number HZU6.8Z
Manufacturer Hitachi
File Size 28.26 KB
Description Silicon Epitaxial Planar Zener Diode for Surge Absorb
Datasheet download datasheet HZU6.8Z Datasheet
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HZU6.8Z Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-777(Z) Rev 0 Feb. 1999 Features • Low capacitance (C=25pF max) and can protect ESD of signal line. • Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information Type No. HZU6.8Z Laser Mark 68Z Package Code URP Outline Cathode mark Mark 1 68Z 2 1. Cathode 2. Anode HZU6.8Z Absolute Maximum Ratings (Ta = 25°C) Item Power dissipation Junction temperature Storage temperature Note 1. See Fig.2. Symbol Pd Tj Tstg *1 Value 200 150 -55 to +150 Unit mW °C °C Electrical Characteristics (Ta = 25°C) Item Zener voltage Reverse current Capacitance Dynamic resistance ESD-Capability *2 Symbol VZ IR C rd  Min 6.47    20 Typ      Max 7.
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