K3380 - Silicon N Channel MOS FET

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Hitachi

Part number	K3380
Manufacturer	Hitachi
File Size	23.75 KB
Description	Silicon N Channel MOS FET
Datasheet	K3380 Datasheet
Additional preview pages of the K3380 datasheet.

Low on-resistance RDS =1.26 Ω typ. (VGS = 10 V , ID = 150 mA) RDS = 2.8 Ω typ. (VGS = 4 V , ID = 50 mA).
4 V gate drive device. Outline SPAK ADE-208-806 (Z) 1st. Edition. June 1999 D G S 123 1. Source 2. Drain 3. Gate 2SK3380 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation VDSS VGSS ID I Note1 D(pulse) I DR Pch Channel temperature.

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Published: Aug 1, 2017 |