K3380 - Silicon N Channel MOS FET

Datasheet Summary

Features

Low on-resistance RDS =1.26 Ω typ. (VGS = 10 V , ID = 150 mA) RDS = 2.8 Ω typ. (VGS = 4 V , ID = 50 mA).
4 V gate drive device. Outline SPAK ADE-208-806 (Z) 1st. Edition. June 1999 D G S 123 1. Source 2. Drain 3. Gate 2SK3380 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation VDSS VGSS ID I Note1 D(pulse) I DR Pch Channel temperature.

Hitachi

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Datasheet Details

Part number	K3380
Manufacturer	Hitachi
File Size	23.75 KB
Description	Silicon N Channel MOS FET
Datasheet	K3380 Datasheet
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2SK3380 Silicon N Channel MOS FET High Speed Switching Features • Low on-resistance RDS =1.26 Ω typ. (VGS = 10 V , ID = 150 mA) RDS = 2.8 Ω typ. (VGS = 4 V , ID = 50 mA) • 4 V gate drive device. Outline SPAK ADE-208-806 (Z) 1st.Edition. June 1999 D G S 123 1. Source 2. Drain 3. Gate 2SK3380 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation VDSS VGSS ID I Note1 D(pulse) I DR Pch Channel temperature Tch Storage temperature Tstg Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% Ratings 30 ±20 300 1.

Published: Aug 1, 2017 |