K3380 Description
2SK3380 Silicon N Channel MOS FET High Speed Switching.
K3380 Key Features
- Low on-resistance RDS =1.26 Ω typ. (VGS = 10 V , ID = 150 mA) RDS = 2.8 Ω typ. (VGS = 4 V , ID = 50 mA)
- 4 V gate drive device
K3380 is Silicon N Channel MOS FET manufactured by Hitachi Semiconductor.
2SK3380 Silicon N Channel MOS FET High Speed Switching.