K3380
Key Features
- Low on-resistance RDS =1.26 Ω typ. (VGS = 10 V , ID = 150 mA) RDS = 2.8 Ω typ. (VGS = 4 V , ID = 50 mA)
- 4 V gate drive device. Outline SPAK ADE-208-806 (Z) 1st.Edition. June 1999 D G S 123
- Gate 2SK3380
- Part: K3380
- Description: Silicon N Channel MOS FET
- Manufacturer: Hitachi Semiconductor
- Size: 23.75 KB