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Hitachi Power Semiconductor Device Electronic Components Datasheet

2SA778 Datasheet

Silicon PNP Transistor

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2SA778(K), 2SA778A(K)
Silicon PNP Epitaxial
Application
High voltage medium speed switching
Outline
TO-92 (1)
3
2
1
1. Emitter
2. Collector
3. Base


Hitachi Power Semiconductor Device Electronic Components Datasheet

2SA778 Datasheet

Silicon PNP Transistor

No Preview Available !

2SA778(K), 2SA778A(K)
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
2SA778(K)
–150
–150
–5
–50
200
150
–55 to +150
2SA778A(K)
–180
–180
–5
–50
200
150
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol
Collector to base
breakdown voltage
V(BR)CBO
Collector to emitter
breakdown voltage
V(BR)CER
Collector cutoff current ICBO
Emitter cutoff current IEBO
DC current transfer ratio hFE
Collector to emitter
saturation voltage
VCE(sat)
Base to emitter
saturation voltage
VBE(sat)
Collector output
capacitance
Cob
Gain bandwidth product fT
Turn on time
Turn off time
t on
t off
Storage time
t stg
2SA778(K)
Min Typ Max
–150 — —
–150 — —
— — –1.0
———
— — –1.0
30 100 —
— –0.3 –1.0
— –0.77 –1.0
— — 10
— 50 —
— 135 —
— 1.7 —
— — 1.0
2SA778A(K)
Min Typ Max Unit Test conditions
–180 — — V
IC = –50 µA, IE = 0
–180 — — V
— — — µA
— — –1.0 µA
— — –1.0 µA
40 100 200
— –0.3 –1.0 V
— –0.77 –1.0 V
— — 10 pF
IC = –50 µA,
RBE = 30 k
VCB = –100 V, IE = 0
VCB = –150 V, IE = 0
VEB = –5 V, IC = 0
VCE = –3 V,
IE = –15 mA
IC = –15 mA,
IB = –1 mA
IC = –15 mA,
IB = –1 mA
VCB = –10 V, IE = 0,
f = 1 MHz
— 50 — MHz VCE = –3 V,
IC = –15 mA
— 135 — ns VCC = –10.3 V
— 1.7 — µs IC = 10 IB1 = –10
IB2 = –10 mA
— — 1.0 µs VCC = –10 V,
IC =–17 mA
IB1 = –1mA,
IB2 = –12 mA
2


Part Number 2SA778
Description Silicon PNP Transistor
Maker Hitachi Semiconductor
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2SA778 Datasheet PDF






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