2SC4747
Feature
- High breakdown voltage VCBO = 1500 V
- High speed switching tf ≤ 0.3 µs
Outline
TO-3PFM
1. Base 2. Collector 3. Emitter
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector surge current Collector power dissipation Junction temperature Storage temperature Note: 1. Value at TC = 25°C. Symbol VCBO VCEO VEBO IC IC(surge) PC- Tj Tstg
Ratings 1500 800 6 10 20 50 150
- 55 to +150
Unit V V V A A W °C °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min 800 6
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- Typ
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- Max
- - 500 30 5 1.5 0.3 V V µs Unit V V µA Test conditions IC = 10 m A, RBE = _ IE = 10 m A, IC = 0 VCE = 1500 V, RBE = 0 VCE = 5 V, IC = 1 A IC = 8 A, IB = 1.6 A IC = 8 A, IB = 1.6 A ICP = 7 A, IB1 = 1.4 A Collector to emitter breakdown V(BR)CEO voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage...
