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Hitachi Power Semiconductor Device Electronic Components Datasheet

2SC4807 Datasheet

NPN TRANSISTOR

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2SC4807
Silicon NPN Epitaxial
Application
VHF / UHF wide band amplifier
Features
High gain bandwidth product
fT = 4.4 GHz Typ
High output power
1 dB Power compression point Pcp = 24 dBm Typ at VCE = 5V , IC = 100 mA , f = 900 MHz
Outline
UPAK
1
2
3
4 1. Base
2. Collector
3. Emitter
4. Collector (Flange)


Hitachi Power Semiconductor Device Electronic Components Datasheet

2SC4807 Datasheet

NPN TRANSISTOR

No Preview Available !

2SC4807
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
Ratings
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
VCBO
VCEO
VEBO
IC
PC * 1
Tj
20
15
2
200
800
150
Storage temperature
Tstg –55 to +150
Note: 1. Value on the alumina ceramics board (12.5 x 20 x 0.7 mm)
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
V(BR)CBO
20
30
V
voltage
IC = 10 µA, IE = 0
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector output capacitance
Gain bandwidth product
Power gain
I CBO
I CEO
I EBO
hFE
Cob
fT
PG
— —1
µA VCB = 15 V, IE = 0
— —1
mA VCE = 15 V, RBE =
— — 10 µA VEB = 2 V, IC = 0
50 120 250
VCE = 5 V, IC = 100 mA
— 2.8 4.0 pF VCB = 5 V, IE = 0, f = 1 MHz
3.0 4.4 —
GHz VCE = 5 V, IC = 100 mA
5.0 7.0 — dB VCE = 5 V, IC = 100 mA,
f = 900 MHz
Noise figure
NF
2.5 4.0 dB
VCE = 5 V, IC = 20 mA,
f = 900 MHz
Note: Marking is “ER”.
2


Part Number 2SC4807
Description NPN TRANSISTOR
Maker Hitachi Semiconductor
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2SC4807 Datasheet PDF






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