High gain, high efficiency PG = 15 dB, ηD = 65% typ (f = 200 MHz).
Compact package Suitable for push - pull circuit
Outline
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2SK1999
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Channel dissipation Channel temperature Storage temperature Note: 1. Value at TC = 25°C Symbol VDSS VGSS ID Pch.
Tch Tstg
1
Ratings 120 ±20 12 18.
📁 Related Datasheet
2SK1990 - (2SK1990 / 2SK1991) MOS Field Effect Power Transistor (NEC)
2SK1991 - (2SK1990 / 2SK1991) MOS Field Effect Power Transistor (NEC)