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2SK1999 - Silicon NPN Transistor

Features

  • High gain, high efficiency PG = 15 dB, ηD = 65% typ (f = 200 MHz).
  • Compact package Suitable for push - pull circuit Outline DataSheet4U. com et4U. com DataShee DataSheet4U. com DataSheet 4 U . com www. DataSheet4U. com 2SK1999 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Channel dissipation Channel temperature Storage temperature Note: 1. Value at TC = 25°C Symbol VDSS VGSS ID Pch.
  • Tch Tstg 1 Ratings 120 ±20 12 18.

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www heet4 Data www.DataSheet4U.com 2SK1999 Silicon N-Channel MOS FET Application VHF amplifier Features • High gain, high efficiency PG = 15 dB, ηD = 65% typ (f = 200 MHz) • Compact package Suitable for push - pull circuit Outline DataSheet4U.com et4U.com DataShee DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com 2SK1999 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Channel dissipation Channel temperature Storage temperature Note: 1. Value at TC = 25°C Symbol VDSS VGSS ID Pch* Tch Tstg 1 Ratings 120 ±20 12 180 150 –55 to +150 Unit V V A W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage* 1 Gate to source breakdown voltage* 1 Symbol Min V(BR)DSS V(BR)GSS 120 ±20 — 0.
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