Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter Avalanche ratings
Outline
TO-220CFM
D G
12
3
1. Gate 2. Drain 3. Source
S
www. DataSheet4U. com
2SK2390
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalan.
Full PDF Text Transcription for 2SK2390 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
2SK2390. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet4U.com 2SK2390 Silicon N-Channel MOS FET November 1996 Application High speed power switching Features • • • • • • Low on-resistance High speed switching Low...
View more extracted text
tching Features • • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC-DC converter Avalanche ratings Outline TO-220CFM D G 12 3 1. Gate 2. Drain 3. Source S www.DataSheet4U.com 2SK2390 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25 °C 3.
More Datasheets from Hitachi Semiconductor (now Renesas)
2SK2390 Datasheet
