2SK2390 Description
2SK2390 Silicon N-Channel MOS FET November 1996 Application High speed power switching.
2SK2390 Key Features
- Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable fo
2SK2390 is Silicon N-Channel MOS FET manufactured by Hitachi Semiconductor.
2SK2390 Silicon N-Channel MOS FET November 1996 Application High speed power switching.