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2SK2922 - Silicon N Channel MOS FET

2SK2922 Description

2SK2922 Silicon N Channel MOS FET UHF Power Amplifier ADE-208-675(Z) 1st.Edition Aug.1998 .

2SK2922 Features

* High power output, High gain, High efficiency PG = 8.0dB, Pout = 31dBm, ηD = 57 %min. (f = 836.5MHz)
* Compact package capable of surface mounting Outline UPAK 3 2 1 4 1. Gate 2. Source 3. Drain 4. Source This Device is sensitive to Electro Static Discharge. An Adequate handl

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Datasheet Details

Part number
2SK2922
Manufacturer
Hitachi Semiconductor
File Size
36.34 KB
Datasheet
2SK2922_HitachiSemiconductor.pdf
Description
Silicon N Channel MOS FET

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Silicon Channel MOS FET Hitachi Semiconductor
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