2SK2922 Datasheet | Hitachi Semiconductor

Features - High power output, High gain, High efficiency PG = 8.0d B, Pout = 31d Bm, ηD = 57 %min. (f = 836.5MHz) - pact package capable of surface mounting Outline UPAK 4 1. Gate 2. Source 3. Drain 4. Source This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested. Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) Pch Tch Tstg Note1 Note2 Ratings 10 ±6 0.7 1.4 3 150 - 45 to +150 Unit V V A A W °C °C 1. PW ≤ 10ms, duty cycle ≤ 50 % 2. Value at Tc = 25° C Electrical Characteristics (Ta = 25°C) Item Symbol Min - - 0.4 - - 31 57 Typ - - - 27 13 - - Max 100 ±5.0 1.2 - - - - Unit µA µA V p F p F d Bm % Test Conditions VDS = 10 V, VGS = 0 VGS = ±6V, VDS = 0 I D = 3m A, VDS = 5V VGS = 2V, VDS = 0, f = 1MHz VDS = 5, VGS = 0, f = 1MHz VDS = 4.7V, f =836.5Mhz Pin = 23d Bm VDS = 4.7V, f =836.5Mhz Pin = 23d Bm Zero gate voltage drain current I DSS Gate to source leak current Gate to source cutoff voltage Input capacitance Output capacitance Output Power Drain Rational Note: 1. Marking is “HX”. I GSS VGS(off) Ciss Coss Pout ηD Main Characteristics Maximum Channel Power Dissipation Curve Pch (W) 4 5 Typical Output Characteristics Pulse Test 6V 5.5 V 5V 4.5 V Channel Power Dissipation I D (A) 4V 3.5 V Drain Current 3V 2.5...