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2SK2922 Datasheet, Hitachi Semiconductor

2SK2922 fet equivalent, silicon n channel mos fet.

2SK2922 Avg. rating / M : 1.0 rating-11

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2SK2922 Datasheet

Features and benefits


* High power output, High gain, High efficiency PG = 8.0dB, Pout = 31dBm, ηD = 57 %min. (f = 836.5MHz)
* Compact package capable of surface mounting Outline UPAK.

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2SK2922 Page 1 2SK2922 Page 2 2SK2922 Page 3

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