2SK359
Silicon N-Channel MOS FET
Application
VHF amplifier
Outline
TO-92 (2)
1. Gate 2. Source 3. Drain 3 2 1
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Gate current Channel power dissipation Channel temperature Storage temperature Note: 1. VGS =
- 4 V Symbol VDSX- VGSS ID IG Pch Tch Tstg
Ratings 20 ±5 30 ±1 400 150
- 55 to +150
Unit V V m A m A m W °C °C
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate cutoff current Drain current Gate to source cutoff voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Power gain Noise figure Note: D 4 to 8 E 6 to 10 F 8 to 12 Symbol V(BR)DSX I GSS I DSS-
Min 20
- 4 0 8
- -
- -
- Typ
- -
- - 14 2.5 1.6 0.03 30 2
Max
- ±20 12
- 2.0
- -
- -
- -
Unit V n A m A V m S p F p F p F d B d B
Test conditions I D = 100 µA, VGS =
- 4 V VGS = ±5 V, VDS = 0 VDS = 10 V, VGS = 0 VDS = 10 V, ID = 10 µA VDS = 10 V,...
