Datasheet Specifications
- Part number
- 6AM13
- Manufacturer
- Hitachi Semiconductor
- File Size
- 65.22 KB
- Datasheet
- 6AM13_HitachiSemiconductor.pdf
- Description
- Silicon N-Channel/P-Channel Complementary Power MOS FET Array
Description
.6AM13 Features
* Low on-resistance N-channel: RDS(on) ≤ 0.075 , VGS = 10 V, I D = 5 A P-channel: RDS(on) ≤ 0.12 , VGS =
* 10 V, I D =
* 5 A
* Capable of 4 V gate drive
* Low drive current
* High speed switching
* High density mounting
* Suitable for H-b
6AM13 Distributors
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