6AM13 - Silicon N-Channel/P-Channel Complementary Power MOS FET Array

Hitachi Semiconductor

6AM13 Product details

Low on-resistance N-channel: RDS(on) ≤ 0.075 , VGS = 10 V, I D = 5 A P-channel: RDS(on) ≤ 0.12 , VGS =.
10 V, I D =.
5 A.
Capable of 4 V gate drive.
Low drive current.
High speed switching.
High density mounting.
Suitable for H-bridged motor driver 6AM13 Outline SP-12TA 5 S Pch 6 G 4G D3 8 G D7 9 G D 10 12 3 11 G 12 S Nch 2G 4 5 6 7 8 9 10 1112 S 1 N-ch Source 1. 2, 8, 9 N-ch Gate 3, 7, 10. N-ch Drain P-ch Drain 4, 6, 11. P-ch Gate 5, 12. P-ch Source Absolute Maximum Ratings (Ta = 25°C) Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1.

📁 Related Datasheet

6AM11 - Silicon N-channel/p-channel Power MOS Fet Array (Renesas)
6AM12 - Silicon N-channel/p-channel Complementary Power MOS Fet Array (Renesas)

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Hitachi Semiconductor 6AM13-like datasheet

6AM13 Stock/Price