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6AM13 - Silicon N-Channel/P-Channel Complementary Power MOS FET Array

Key Features

  • Low on-resistance N-channel: RDS(on) ≤ 0.075 , VGS = 10 V, I D = 5 A P-channel: RDS(on) ≤ 0.12 , VGS =.
  • 10 V, I D =.
  • 5 A.
  • Capable of 4 V gate drive.
  • Low drive current.
  • High speed switching.
  • High density mounting.
  • Suitable for H-bridged motor driver 6AM13 Outline SP-12TA 5 S Pch 6 G 4G D3 8 G D7 9 G D 10 12 3 11 G 12 S Nch 2G 4 5 6 7 8 9 10 1112 S 1 N-ch Source 1. 2, 8, 9 N-ch Gate 3, 7, 10. N-ch Drain P-ch Drain 4.

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📁 Similar Datasheet

Part Number Description Manufacturer
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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
6AM14 Silicon N-Channel/P-Channel Power MOS FET Array
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Full PDF Text Transcription (Reference)

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6AM13 Silicon N-Channel/P-Channel Complementary Power MOS FET Array ADE-208-1217 (Z) 1st. Edition Mar. 2001 Application High speed power switching Features • Low on-resistance N-channel: RDS(on) ≤ 0.075 , VGS = 10 V, I D = 5 A P-channel: RDS(on) ≤ 0.12 , VGS = –10 V, I D = –5 A • Capable of 4 V gate drive • Low drive current • High speed switching • High density mounting • Suitable for H-bridged motor driver 6AM13 Outline SP-12TA 5 S Pch 6 G 4G D3 8 G D7 9 G D 10 12 3 11 G 12 S Nch 2G 4 5 6 7 8 9 10 1112 S 1 N-ch Source 1. 2, 8, 9 N-ch Gate 3, 7, 10. N-ch Drain P-ch Drain 4, 6, 11. P-ch Gate 5, 12.