* Low on-resistance N-channel: RDS(on) ≤ 0.075 , VGS = 10 V, I D = 5 A P-channel: RDS(on) ≤ 0.12 , VGS =
* 10 V, I D =
* 5 A
* Capable of 4 V gate drive
* Low drive current
* High speed switching
* High density mounting
* Suitable for H-b
6AM13
Hitachi Semiconductor
65.22 KB
Silicon n-channel/p-channel complementary power mos fet array.
6AM13 Silicon N-Channel/P-Channel Complementary Power MOS FET Array ADE-208-1217 (Z) 1st. Edition Mar. 2001 Application High speed power switching F.
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